Observation and Ultrafast Dynamics of Inter‐Sub‐Band Transition in InAs Twinning Superlattice Nanowires
Mengfei Xue,Ming Li,Yisheng Huang,Runkun Chen,Yunliang Li,Jingyun Wang,Yingjie Xing,Jianjun Chen,Hugen Yan,Hongqi Xu,Jianing Chen
DOI: https://doi.org/10.1002/adma.202004120
IF: 29.4
2020-09-02
Advanced Materials
Abstract:<p>A variety of infrared applications rely on semiconductor superlattices, including, notably, the realization of high‐power, compact quantum cascade lasers. Requirements for atomically smooth interface and limited lattice matching options set high technical standards for fabricating applicable heterostructure devices. The semiconductor twinning superlattice (TSL) forms in a single compound with periodically spaced twin boundaries and sharp interface junctions and can be grown with convenient synthesis methods. Therefore, employing semiconductor TSL may facilitate the development of optoelectronic applications related to superlattice structures. Here, it is shown that InAs TSL nanowires generate inter‐sub‐band transition channels due to the band projection and the Bragg‐like electron reflection. The findings reveal the physical mechanisms of inter‐sub‐band transitions in TSL structure and suggest that TSL structures are promising candidates for mid‐infrared optoelectronic applications.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology