Abstract:Using potassium acetate as the tin oxide passivation layer can effectively passivate defects at the interface and enhance the quality of the perovskite film. The VOC and FF of the improved device are greatly improved, and the champion device obtains 23.63% of power conversion efficiency. This work proves that simple interface treatment can effectively improve the device performance of perovskite solar cells. The quality of the tin dioxide interface has an important impact on the performance of perovskite solar cells. Herein, a facile potassium acetate strategy to effectively treat the SnO2/perovskite interface and enhance the film quality of perovskite crystals is used. The defect density at the interface can be reduced, thereby suppressing the nonradiative recombination of excitons. Enhanced performance of the two‐step deposited perovskite device is obtained with an open‐circuit voltage (VOC) of 1.173 V, a fill factor of 78.31%, and a power conversion efficiency of 23.63%.

Potassium Acetate Passivated SnO2 Interface for High‐Efficiency Two‐Step Deposited Perovskite Solar Cells