High Performance Direct Current-Generating Triboelectric Nanogenerators Based on Tribovoltaic P-N Junction with Chcl-Passivaed Csfama Perovskite

You-Sun Lee,Sera Jeon,Dabin Kim,Dong-Min Lee,Do-Hyung Kim,Sang-Woo Kim
DOI: https://doi.org/10.2139/ssrn.4233142
2022-01-01
SSRN Electronic Journal
Abstract:Herein, we develop direct current-generating triboelectric nanogenerators (DC-TENGs) based on tribovoltaic p-n junction using n-type perovskite (CsFAMA) and p-type conductive polymer (PEDOT:PSS) which generates a high DC power output of about 2.09 µA cm−2 (current) and 0.33 V (voltage). Furthermore, we introduce choline chloride (ChCl) to passivate defects inside CsFAMA in order to improve the power-generating performance of DC-TENG through increasing triboelectric charge density, carrier mobility and built-in potential which are key factors that determine device performance. Owing to the synergetic effect of reduced defect sites (5.0x1010 cm-3 to 1.0x1010 cm-3), enhanced electron mobilities (1.0x10-2 cm2V-1s-1 to 2.3x10-2 cm2V-1S-1), and modulated work function, the passivated CsFAMA-based DC-TENG generates 10.68 µA cm−2 of output current density and 0.80 V of output voltage. Our results provide an insight to realize high-performance DC-TENGs with a promising strategy through controlling triboelectric semiconducting interface.
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