Toward gallium oxide power electronics

Marko J. Tadjer

DOI: https://doi.org/10.1126/science.add2713

IF: 56.9

2022-11-18

Science

Abstract:Ultrawide-bandgap semiconductors show promise for high-power transistors

multidisciplinary sciences

What problem does this paper attempt to address?

β-Gallium oxide power electronics

Andrew J. Green,James Speck,Grace Xing,Peter Moens,Fredrik Allerstam,Krister Gumaelius,Thomas Neyer,Andrea Arias-Purdue,Vivek Mehrotra,Akito Kuramata,Kohei Sasaki,Shinya Watanabe,Kimiyoshi Koshi,John Blevins,Oliver Bierwagen,Sriram Krishnamoorthy,Kevin Leedy,Aaron R. Arehart,Adam T. Neal,Shin Mou,Steven A. Ringel,Avinash Kumar,Ankit Sharma,Krishnendu Ghosh,Uttam Singisetti,Wenshen Li,Kelson Chabak,Kyle Liddy,Ahmad Islam,Siddharth Rajan,Samuel Graham,Sukwon Choi,Zhe Cheng,Masataka Higashiwaki

DOI: https://doi.org/10.1063/5.0060327

IF: 6.6351

2022-02-01

APL Materials

Abstract:Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community. Addressing these challenges will enhance the state-of-the-art device performance and allow us to design efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Cheap Ultra-Wide Bandgap Power Electronics? Gallium Oxide May Hold the Answer

Marko J. Tadjer

DOI: https://doi.org/10.1149/2.f05184if

2018-01-01

The Electrochemical Society Interface

Abstract:The case for monoclinic Gallium Oxide (β-Ga2O3) as a viable material for next-generation power electronics is presented from a wide-bandgap semiconductor device engineering point of view. The combination of an ultra-wide bandgap, high critical field, controlled doping, extremely high quality substrates, binary and ternary epitaxial layers and structures, as well as the ability to grow cheap, large area substrates from the melt have compelled a number of scientists worldwide to explore Ga2O3. Overcoming its disadvantages, such as the difficulty in realizing p-type conductivity and its extremely low conductivity, as well as competition from technologies in the marketplace, such as GaN and SiC power devices, will determine whether Ga2O3 becomes technologically relevant for power electronics.
Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

Yuan Qin,Qiming He,Ming Liu,S. Long,Guangzhong Jian,Huiwen Xue,Hang Dong

DOI: https://doi.org/10.1088/1674-4926/40/1/011802

2019-01-01

Journal of Semiconductors

Abstract:As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.

Materials Science,Physics,Engineering
Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014)

Masataka Higashiwaki,Kohei Sasaki,Akito Kuramata,Takekazu Masui,Shigenobu Yamakoshi

DOI: https://doi.org/10.1002/pssa.201470201

2014-01-01

physica status solidi (a)

Abstract:A promising wide bandgap alternative that has been overlooked up until now is gallium oxide (Ga2O3). Thanks to material properties related to its bandgap (4.7–4.9 eV) that is significantly larger than that of SiC and GaN, this oxide promises to enable the production of devices with higher breakdown voltages and higher efficiencies than those stemming from its wide bandgap rivals. What's more, Ga2O3 power devices could be manufactured at low cost in high volume, because it is possible to produce single‐crystal native substrates from a melt using the same method employed for manufacturing sapphire substrates. Metal‐semiconductor field‐effect transistors (MESFETs) and Schottky barrier diodes (SBDs) fabricated on single‐crystal Ga2O3 substrates have already demonstrated reasonably good device characteristics for considering high‐performance power electronics application in the near future. For further details see the Invited Article by Higashiwaki et al. (pp. 21–26). The cover page shows schematic illustrations of the Ga2O3 MESFETs and SBDs, and a photograph of a 2’’‐diameter Ga2O3 wafer, on a micrograph of a ring‐pattern MESFET.
Toward emerging gallium oxide semiconductors: A roadmap

Yuan Yuan,Weibing Hao,Wenxiang Mu,Zhengpeng Wang,Xuanhu Chen,Qi Liu,Guangwei Xu,Chenlu Wang,Hong Zhou,Yanni Zou,Xiaolong Zhao,Zhitai Jia,Jiandong Ye,Jincheng Zhang,Shibing Long,Xutang Tao,Rong Zhang,Yue Hao

DOI: https://doi.org/10.1016/j.fmre.2021.11.002

2021-11-01

Fundamental Research

Abstract:Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor material for new researches. This article mainly focuses on the growth processes, material characteristics, and applications of Ga2O3. Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors, large-size and high-quality β-Ga2O3 single crystals can be efficiently grown with a low cost, making them highly competitive. Thanks to the availability of high-quality single crystals, epitaxial films, and rich material systems, high-performance semiconductor devices based on Ga2O3 go through a booming development in recent years. The defects and interfaces of Ga2O3 are comprehensively analyzed owing to their significant influence on practical applications. In this study, the two most common applications of Ga2O3 materials are introduced. The high breakdown electric field, high working temperature, and excellent Baliga's figure-of-merit of Ga2O3 represent an inspiring prospect for power electronic devices. In addition, the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress. Finally, the , challenges, and prospects of the Ga2O3 materials and devices are presented and discussed.
Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices

Ramchandra M. Kotecha,Andriy Zakutayev,Wyatt K. Metzger,Paul Paret,Gilberto Moreno,Bidzina Kekelia,Kevin Bennion,Barry Mather,Sreekant Narumanchi,Samuel Kim,Samuel Graham

DOI: https://doi.org/10.1115/ipack2019-6453

2019-10-07

Abstract:Abstract Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device’s behavior and its static and dynamic characteristics. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.
Gallium oxide: promise to provide more efficient life

Yue Hao

DOI: https://doi.org/10.1088/1674-4926/40/1/010301

2019-01-01

Journal of Semiconductors

Abstract:Despite being the long-time mainstream semiconductor for both logic and power devices, Silicon is now facing its dilemma and limitation of scalability and material potential. Especially for power devices, people are demanding escalating efficiency with higher blocking voltage while its power consumption and heat generation are less. Constrained by its narrow bandgap of 1.14 eV, Silicon only has a critical breakdown field (Ec) of 0.3 MV/cm, yielding a Baliga figure-of-merit (BFOM = ε × μ × Ec3) of unity when normalized to itself. It is hence required that the dominating factor Ec should be as high as possible such that the BFOM will be hundreds or even thousands of times when compared to Silicon so as to minimize the conduction loss. Beta-Gallium Oxide (β-Ga2O3) with decent μ of 250 cm2/Vs, ultra-wide bandgap of 4.8 eV and high critical Ec of 8 MV/cm, yielding a superior high BFOM of more than 3000. Therefore, system made with β-Ga2O3 can be thinner, lighter and capable of handling more power than the one with Silicon. In addition, low-cost and large size substrate through melt-grown method endows β-Ga2O3 more potentials as cost-effective power devices. After resolving the low thermal conductivity issue, unipolar devices made with ultra-wide bandgap β-Ga2O3 are promised to make power transition and our life more efficient.

physics, condensed matter
P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Ekaterine Chikoidze,Adel Fellous,Amador Perez-Tomas,Guillaume Sauthier,Tamar Tchelidze,Cuong Ton-That,Tung Thanh Huynh,Matthew Phillips,Stephen Russell,Mike Jennings,Bruno Berini,Francois Jomard,Yves Dumont

DOI: https://doi.org/10.1016/j.mtphys.2017.10.002

IF: 11.021

2017-12-01

Materials Today Physics

Abstract:Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) – O2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.

materials science, multidisciplinary,physics, applied
Development of gallium oxide power devices

Masataka Higashiwaki,Kohei Sasaki,Akito Kuramata,Takekazu Masui,Shigenobu Yamakoshi

DOI: https://doi.org/10.1002/pssa.201330197

2013-11-13

physica status solidi (a)

Abstract:Gallium oxide (Ga2O3) is a strong contender for power electronic devices. The material possesses excellent properties such as a large bandgap of 4.7–4.9 eV for a high breakdown field of 8 MV cm−1. Low cost, high volume production of large single‐crystal β‐Ga2O3 substrates can be realized by melt‐growth methods commonly adopted in the industry. High‐quality n‐type Ga2O3 epitaxial thin films with controllable carrier densities were obtained by ozone molecular beam epitaxy (MBE). We fabricated Ga2O3 metal‐semiconductor field‐effect transistors (MESFETs) and Schottky barrier diodes (SBDs) from single‐crystal Ga2O3 substrates and MBE‐grown epitaxial wafers. The MESFETs delivered excellent device performance including an off‐state breakdown voltage (Vbr) of over 250 V, a low leakage current of only few μA mm−1, and a high drain current on/off ratio of about four orders of magnitude. The SBDs also showed good characteristics such as near‐unity ideality factors and high reverse Vbr. These results indicate that Ga2O3 can potentially meet or even exceed the performance of Si and typical widegap semiconductors such as SiC or GaN for ultrahigh‐voltage power switching applications.
Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Ory Maimon,Qiliang Li

DOI: https://doi.org/10.3390/ma16247693

2023-12-18

Abstract:Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm-1, and Baliga figure of merit of 3300, 3-10 times larger than that of SiC and GaN. Moreover, β-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of β-Ga2O3 and β-(AlxGa1-x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in β-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in β-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined.
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Zeyu Chi,Jacob J. Asher,Michael R. Jennings,Ekaterine Chikoidze,Amador Pérez-Tomás

DOI: https://doi.org/10.3390/ma15031164

IF: 3.4

2022-02-02

Materials

Abstract:Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Xutang Tao,Jiandong Ye,Shibing Long,Zhitai Jia

DOI: https://doi.org/10.1088/1674-4926/40/1/010101

2019-01-01

Journal of Semiconductors

Abstract:>As one of the ultra-wide bandgap (UWBG) semiconducting materials, gallium oxide has attractive properties with a wide bandgap of about 4.8 eV and a high breakdown field of about 8 MV/cm, which offers an alternative platform for various applications such as high performance power switches, RF amplifiers, solar blind photodetectors, and harsh environment signal processing. Benefited from the
Fundamental Properties and Power Electronic Device Progress of Gallium Oxide

Xuanhu Chen,Chennupati Jagadish,Jiandong Ye

DOI: https://doi.org/10.1002/9781119529538.ch9

2021-01-01

Abstract:Gallium oxide (Ga2O3) is an emerging ultrawide band gap (UWBG) semiconducting material as a key building block for the applications of power electronics and deep ultraviolet optoelectronics beyond existing technologies. To date, rapid progress has been achieved in the development of state-of-the-art epitaxy of Ga2O3 material and high-performance power devices and solar-blind photodetectors, however, several remaining challenges require proper solutions for practical applications. In this chapter, the fundamental properties of the Ga2O3 material and basic characteristics of power devices have been briefly summarized in the first part; consequently, recent advances of Ga2O3-based power electronic devices, including Schottky barrier diodes (SBDs), metal-oxide-semiconductor field effect transistors (MOSFETs), and modulation-doped field effect transistors (MODFETs) have been comprehensively reviewed. A special focus is to address the physical mechanism for the deep-depletion MOSFET based on Ga2O3 material. This chapter may provide better understanding on the fundamental properties of the Ga2O3 emerging material to fully exploit its promising applications in power electronics.
Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Salvatore Musumeci,Vincenzo Barba

DOI: https://doi.org/10.3390/en16093894

IF: 3.2

2023-05-05

Energies

Abstract:High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

energy & fuels
A strategic review on gallium oxide based power electronics: Recent progress and future prospects

Shivani,Damanpreet Kaur,Anupam Ghosh,Mukesh Kumar

DOI: https://doi.org/10.1016/j.mtcomm.2022.104244

IF: 3.8

2022-12-01

Materials Today Communications

Abstract:Silicon based power devices have limited capabilities in terms of voltage handling and switching speeds, leading to rampant research in the field of next generation wide bandgap semiconductors like SiC, GaN, and Ga2O3. Amongst these, gallium oxide with its ultra-wide bandgap of 4.6–4.9 eV and high breakdown field (approx. 8 MV cm−1) turns out to be a potential replacement. Availability of large size, high-quality wafers at moderate costs make it desirable even from industrial viewpoint. Ga2O3 power diodes having breakdown voltages (Vbr) of hundreds of Volts have been reported. However, they suffer from very high on-resistance (Ron) leading to increased switching losses and decreased switching speed. This timely review analyses the recent progress made in Ga2O3 based power devices with detailed discussion on the basic parameters such as Vbr, Ron and leakage current along with the factors critically affecting them. Special focus is laid on the impeccable value-additive extreme environment applications. Open challenges plaguing the field such as trade-off between achieving high Vbr and low Ron simultaneously, shortcomings in the material itself and the need for new physics to explain the high energy carrier transport is also explored along with the future prospects required to achieve true power-saving and commercialization.

materials science, multidisciplinary
Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally

Emily McDonald Garrity,Cheng-Wei Lee,Prashun Gorai,Brooks Tellekamp,Andriy Zakutayev,Vladan Stevanović

DOI: https://doi.org/10.48550/arXiv.2204.09158

2022-04-20

Abstract:As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide band gap (WBG) semiconductors tend to exhibit large breakdown field, allowing high operating voltages. Currently explored WBG materials for power electronics are costly (GaN), difficult to synthesize as high-quality single crystals (SiC) and at scale (diamond, BN), have low thermal conductivity ($\beta$-Ga$_2$O$_3$), or cannot be suitably doped (AlN). We conduct a computational search for novel semiconductors across 1,340 known metal-oxides using first-principles calculations and existing transport models. We calculate the Baliga figure of merit (BFOM) and lattice thermal conductivity ($\kappa_L$) to identify top candidates for n-type power electronics. We find 40 mostly ternary oxides that have higher $\kappa_L$ than $\beta$-Ga$_2$O$_3$ and higher n-type BFOM than SiC and GaN. Among these, several material classes emerge, including 2-2-7 stoichiometry thortveitites and pyrochlores, II-IV spinels, and calcite-type borates. Within these classes, we propose In$_2$Ge$_2$O$_7$, Mg$_2$GeO$_4$, and InBO$_3$ as they are the most favorable for n-type doping based on our preliminary evaluation and could be grown as single crystals or thin film heterostructures. These materials could help advance power electronic devices for the future grid.

Materials Science
Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Zeng Liu,Pei-Gang Li,Yu-Song Zhi,Xiao-Long Wang,Xu-Long Chu,Wei-Hua Tang

DOI: https://doi.org/10.1088/1674-1056/28/1/017105

2019-01-01

Chinese Physics B

Abstract:Gallium oxide (Ga2O3), a typical ultra wide bandgap semiconductor, with a bandgap of ∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga’s figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga2O3 in power devices has been aroused. Many researches have verified that Ga2O3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga2O3, which may provide a guideline for Ga2O3 to be preferably used in power devices fabrication.

physics, multidisciplinary
Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package

Paul Paret,Gilberto Moreno,Bidzina Kekelia,Ramchandra Kotecha,Xuhui Feng,Kevin Bennion,Barry Mather,Andriy Zakutayev,Sreekant Narumanchi,Samuel Graham,Samuel Kim

DOI: https://doi.org/10.1109/wipda.2018.8569139

2018-10-01

Abstract:There is significant interest in the power electronics industry in transitioning from silicon to wide-bandgap devices. Gallium oxide devices have the potential to offer comparable or even superior performance than other wide-bandgap devices, but at a much lower cost. Recent breakthroughs include demonstration of a laboratory-scale gallium oxide transistors and diodes; however, a functional power electronics package for these devices is yet to be developed. In this paper, the research methodology in designing an electronics package for gallium oxide devices is outlined. Finite element-based thermal and thermomechanical modeling simulations were conducted to realize a package design that meets the combined target of minimal thermal resistance and improved reliability. Different package designs that include various material combinations and cooling configurations were explored, and their thermal and thermomechanical performance are reported. Furthermore, the short-circuit withstanding capabilities of gallium oxide devices were studied and compared with silicon carbide.
Preface to Special Issue on Towards High Performance Ga 2 O 3 Electronics: Epitaxial Growth and Power Devices（Ⅰ）

Zhongming Wei

DOI: https://doi.org/10.1088/1674-4926/44/6/060101

2023-01-01

Abstract:There is currently great optimism within the electronics community that gallium oxide (Ga2O3) ultra-wide bandgap semiconductors have unprecedented prospects for eventu-ally revolutionizing a rich variety of power electronic applica-tions. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga2O3 technol-ogy would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications. High-quality Ga2O3 thin films are critical and yet demanding in the quest for power electronic devices with desired performance. Therefore, with the advent of Ga2O3-enabled power device systems, effective epitaxy techniques that can achieve the scalable synthesis of high-quality Ga2O3 thin films are urgently required.

Toward gallium oxide power electronics

β-Gallium oxide power electronics

Cheap Ultra-Wide Bandgap Power Electronics? Gallium Oxide May Hold the Answer

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014)

Toward emerging gallium oxide semiconductors: A roadmap

Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices

Gallium oxide: promise to provide more efficient life

P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Development of gallium oxide power devices

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Fundamental Properties and Power Electronic Device Progress of Gallium Oxide

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

A strategic review on gallium oxide based power electronics: Recent progress and future prospects

Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package

Preface to Special Issue on Towards High Performance Ga 2 O 3 Electronics: Epitaxial Growth and Power Devices（Ⅰ）