Preface to Special Issue on Towards High Performance Ga2O3 Electronics:Epitaxial Growth and Power Devices(Ⅰ)

Genquan Han,Shibing Long,Yuhao Zhang,Yibo Wang,Zhongming Wei
DOI: https://doi.org/10.1088/1674-4926/44/6/060101
2023-01-01
Journal of Semiconductors
Abstract:There is currently great optimism within the electronics community that gallium oxide (Ga2O3) ultra-wide bandgap semiconductors have unprecedented prospects for eventu-ally revolutionizing a rich variety of power electronic applica-tions. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga2O3 technol-ogy would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications. High-quality Ga2O3 thin films are critical and yet demanding in the quest for power electronic devices with desired performance. Therefore, with the advent of Ga2O3-enabled power device systems, effective epitaxy techniques that can achieve the scalable synthesis of high-quality Ga2O3 thin films are urgently required.
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