Toward emerging gallium oxide semiconductors: A roadmap
Yuan Yuan,Weibing Hao,Wenxiang Mu,Zhengpeng Wang,Xuanhu Chen,Qi Liu,Guangwei Xu,Chenlu Wang,Hong Zhou,Yanni Zou,Xiaolong Zhao,Zhitai Jia,Jiandong Ye,Jincheng Zhang,Shibing Long,Xutang Tao,Rong Zhang,Yue Hao
DOI: https://doi.org/10.1016/j.fmre.2021.11.002
2021-11-01
Fundamental Research
Abstract:Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor material for new researches. This article mainly focuses on the growth processes, material characteristics, and applications of Ga2O3. Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors, large-size and high-quality β-Ga2O3 single crystals can be efficiently grown with a low cost, making them highly competitive. Thanks to the availability of high-quality single crystals, epitaxial films, and rich material systems, high-performance semiconductor devices based on Ga2O3 go through a booming development in recent years. The defects and interfaces of Ga2O3 are comprehensively analyzed owing to their significant influence on practical applications. In this study, the two most common applications of Ga2O3 materials are introduced. The high breakdown electric field, high working temperature, and excellent Baliga's figure-of-merit of Ga2O3 represent an inspiring prospect for power electronic devices. In addition, the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress. Finally, the , challenges, and prospects of the Ga2O3 materials and devices are presented and discussed.