Performance of LWIR to VLWIR barrier photodetectors based on M-structure superlattices

Yifan Cheng,Mingming Li,Zhigang Song,Chuanbo Li

DOI: https://doi.org/10.1364/oe.513610

IF: 3.8

2024-01-13

Optics Express

Abstract:Yifan Cheng, Mingming Li, Zhigang Song, Chuanbo Li Antimonide superlattice materials with tunable energy bands, high electron mobility, and easy attainment of good uniformity in large-area ... [Opt. Express 32, 2804-2816 (2024)]

optics

What problem does this paper attempt to address?

Design of uncooled mid-wave infrared detectors based on lead selenide barrier structure

Leisheng Su,Yun Liu,Hong Lu,Heqiu Zhang,Yiming Yang,Jijun Qiu

DOI: https://doi.org/10.35848/1347-4065/ad047b

IF: 1.5

2023-11-01

Japanese Journal of Applied Physics

Abstract:Abstract Mid- and long-wavelength IR photodetectors incorporating narrow-bandgap semiconductors often face the challenge of large RT dark current, limiting their applications in military and civilian use. Herein, a novel pBn + barrier detector architecture based on a lead selenide/indium selenide barrier structure is proposed to significantly suppress the dark current, so that uncooled mid-wave IR (MWIR) photodetectors with high performance can be achieved. The finite element analysis of the detector demonstrates reduced RT dark current down to 55 mA cm −2 under −0.1 V bias, which is a two-fold decrease compared to the InAs/InAsAb type-II superlattice detector. In addition, at RT, the optimized pBn + barrier detector exhibits excellent responsivity and detectivity of 1.23 A W −1 and 9.47 × 10 9 cm Hz 1/2 ·W −1 at 3.8 μ m, respectively. The PbSe-based barrier architecture provides a promising industrialization solution for high-performance uncooled MWIR photodetectors.

physics, applied
Fast Fabrication of WS2/Bi2Se3 Heterostructures for High-Performance Photodetection

Fan Li,Jialin Li,Junsheng Zheng,Yuanbiao Tong,Huanfeng Zhu,Pan Wang,Linjun Li

DOI: https://doi.org/10.1021/acsami.2c17513

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties, which expand the possibilities for future optoelectronic, photovoltaic, and nanoelectronic applications. A portable, fast, and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half wet poly(dimethylsiloxane) (PDMS) transfer process utilizing the change of adhesion energy with the help of micron-sized water droplets. Using this method, a vertical stacking of the WS2/Bi2Se3 heterostructure with a straddling band configuration is successfully assembled on a fluorophlogopite substrate. Thanks to the complementary band gaps and high efficiency of interfacial charge transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W-1 for a visible incident light at 473 nm and 26.7 A W-1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.
Optimization of thickness and doping of heterojunction unipolar barrier layer for dark current suppression in long wavelength strain layer superlattice infrared detectors

Neil Baril,Curtis Billman,Patrick Maloney,Eric Nallon,Meimei Tidrow,Joseph Pellegrino,Sumith Bandara

DOI: https://doi.org/10.1063/1.4775376

IF: 4

2013-01-07

Applied Physics Letters

Abstract:Suppression of generation-recombination dark current and bias stability in long wavelength infrared (LWIR) strained layer superlattice (SLS) detectors, consisting of a lightly doped p-type absorber layer and a wide bandgap hole barrier, are investigated with respect to the wide bandgap barrier layer thickness and doping profile. Dark current IV, photoresponse, and theoretical modeling are used to correlate device performance with the widegap barrier design parameters. Decreased dark current density and increased operating bias were observed as the barrier thickness was increased. This study also identifies key device parameters responsible for optimal performance of heterojunction based SLS LWIR detector.

physics, applied
InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors

Yan Liang,wenguang zhou,Xiangbin Su,Nong Li,Faran Chang,Ruoyu Xie,HongGuang Yu,Jianmei Shi,Chuanbo li,HONGYUE HAO,ChengAo Yang,Guo Wei Wang,Dongwei Jiang,Donghai Wu,ZhiChuan Niu,Youdou Zheng,YingQiang Xu,Yi Shi

DOI: https://doi.org/10.1364/oe.528762

IF: 3.8

2024-06-14

Optics Express

Abstract:Yan Liang, Wenguang Zhou, Xiangbin Su, Nong Li, Faran Chang, Ruoyu Xie, Hongguang Yu, Janmei Shi, Chuanbo Li, Hongyue Hao, Chengao Yang, Guowei Wang, Dongwei Jiang, Donghai Wu, Zhichuan Niu, Youdou Zheng, Yingqiang Xu, Yi Shi A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band bandgap engineered ... [Opt. Express 32, 23822-23830 (2024)]

optics
Vertical Barrier Heterostructures for Reliable and High-Performance Self-Powered Infrared Detection

Fengtian Xia,Dongbo Wang,Jiamu Cao,Wen He,Chenchen Zhao,Zhi Zeng,Bingke Zhang,Donghao Liu,Sihang Liu,Jingwen Pan,Gang Liu,Shujie Jiao,Dan Fang,Xuan Fang,Lihua Liu,Liancheng Zhao,Jinzhong Wang

DOI: https://doi.org/10.1021/acsami.4c04447

IF: 9.5

2024-08-23

ACS Applied Materials & Interfaces

Abstract:With their fascinating properties, emerging two-dimensional (2D) materials offer innovative ways to prepare high-performance infrared (IR) detectors. However, the current performance of 2D IR photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, sharply raised contact resistance, and deteriorated metal conductivity at nanoscale. Here, we introduce a vertical barrier heterojunction with a structure of PtSe(2)/GaAs that combines the...

materials science, multidisciplinary,nanoscience & nanotechnology
High‐Performance van der Waals Metal‐Insulator‐Semiconductor Photodetector Optimized with Valence Band Matching

Feng Gao,Hongyu Chen,Wei Feng,Yunxia Hu,Huiming Shang,Bo Xu,Jia Zhang,Cheng‐Yan Xu,PingAn Hu

DOI: https://doi.org/10.1002/adfm.202104359

IF: 19

2021-06-25

Advanced Functional Materials

Abstract:The vertical metal-insulator-semiconductor (MIS) photodetectors based on van der Waals heterostructures (vdWHs), fabricated by rationally stacking different layers without the limit of lattice-match, have attracted broad interest due to their wide wavelength monitoring range, high responsivity, high detectivity, and fast response. Here, for the first time, the control of barrier height in vdWHs MIS photodetectors is systematically investigated. Optimizing semiconducting and insulating layers enables lowering the hole barrier height to achieve a high performance of the device. Graphene/hexagonal boron nitride (h-BN)/SnS2 device shows the best photodetection performance compared to the other common 2D semiconductors. The lowest barrier height ensures that the photo-induced holes transfer efficiently to the graphene electrode and the dark current is highly suppressed by the h-BN layers. Consequently, the graphene/h-BN/SnS2 MIS photodetectors have a high photoresponsivity of 2 A W−1, a high detectivity of 1013 Jones, and a photocurrent/dark current ratio of 5.2 × 105 at a low applied bias of −0.6 V. The highest detectivity reaches 9.6 × 1013 Jones which is 100–1000 times greater than previously reported vdWHs MIS photodetectors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

Yaojiang Chen,Xuliang Chai,Zhiyang Xie,Zhuo Deng,Ningtao Zhang,Yi Zhou,Zhicheng Xu,Jianxin Chen,Baile Chen

DOI: https://doi.org/10.48550/arXiv.1907.05592

2019-07-12

Applied Physics

Abstract:High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 {\mu}m circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 um circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.
Scalable fabrication of long-wave infrared PtSe 2 -G heterostructure array photodetectors

Mingsheng Long,Fengkui Liu,Fei Ding,Yang Wang,Jiafu Ye,Runzhang Xie,Hao Wang,Mengjian Xu,Fang Wang,Yubing Tu,Tao Han,Feng Li,Zongyuan Zhang,Liwei Liu

DOI: https://doi.org/10.1063/5.0027785

IF: 4

2020-12-07

Applied Physics Letters

Abstract:Two-dimensional (2D) materials with excellent optoelectronic properties have attracted tremendous research interest in recent years. The promising performances of photodetectors based on 2D materials, such as ultrafast photoresponse and ultrahigh photoresponsivity, have been demonstrated in the visible to short-wavelength infrared spectrum range (0.8–2 μm). However, high performance, room temperature operation long-wavelength infrared (LWIR) photodetection is challenging. The detectors based on graphene usually exhibit low photoresponsivity due to the low optical absorption and short carrier lifetime. In addition, the relatively large bandgap of transition metal dichalcogenides limited the photoresponse bandwidth. Here, we report a way to fabricate a scalable device array of room-temperature operation LWIR PtSe2-G heterostructure detectors. The photoresponsivity at 10.6 μm up to ∼300 mA/W is obtained. The long-wave infrared light in the pico-watt range could be detected at room temperature by the PtSe2-G heterostructure detector. This result indicates that the PtSe2-G heterostructure device could be a highly competitive candidate for an uncooled LWIR detector. It also opens a way for a scalable array infrared focus plane device for the LWIR image.

physics, applied
A versatile photodetector assisted by photovoltaic and bolometric effects

Wei Jiang,Tan Zheng,Binmin Wu,Hanxue Jiao,Xudong Wang,Yan Chen,Xiaoyu Zhang,Meng Peng,Hailu Wang,Tie Lin,Hong Shen,Jun Ge,Weida Hu,Xiaofeng Xu,Xiangjian Meng,Junhao Chu,Jianlu Wang

DOI: https://doi.org/10.1038/s41377-020-00396-3

2020-09-10

Light: Science and Applications

Abstract:Abstract The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors. However, the limited exploitation of basic properties makes it difficult for devices to stand out. Here, we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake. Vanadium dioxide is a classical semiconductor with a narrow bandgap, a high temperature coefficient of resistance, and phase transformation. Molybdenum ditelluride, a typical two-dimensional material, is often used to construct optoelectronic devices. The heterostructure can realize three different functional modes: (i) the p–n junction exhibits ultrasensitive detection (450 nm–2 μm) with a dark current down to 0.2 pA and a response time of 17 μs, (ii) the Schottky junction works stably under extreme conditions such as a high temperature of 400 K, and (iii) the bolometer shows ultrabroad spectrum detection exceeding 10 μm. The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation (LWIR). This type of photodetector combines versatile detection modes, shedding light on the hybrid application of novel and traditional materials, and is a prototype of advanced optoelectronic devices.
Fully Depleted Self‐Aligned Heterosandwiched Van Der Waals Photodetectors

Fang Wang,Zhiyi Liu,Tao Zhang,Mingsheng Long,Xiuxiu Wang,Runzhang Xie,Haonan Ge,Hao Wang,Jie Hou,Yue Gu,Xin Hu,Ze Song,Suofu Wang,Qingsong Dong,Kecai Liao,Yubing Tu,Tao Han,Feng Li,Zongyuan Zhang,Xingyuan Hou,Liang Li,Xueao Zhang,Dongxu Zhao,Chongxin Shan,Lei Shan,Weida Hu,Shaoling Wang

DOI: https://doi.org/10.1002/adma.202203283

IF: 29.4

2022-08-20

Advanced Materials

Abstract:Room‐temperature‐operating highly sensitive mid‐wave infrared (MWIR) photodetectors are utilized in a large number of important applications including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using two‐dimentional narrow‐bandgap semiconductors. To date, most of these works utilize atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p‐n junctions as absorbers, which have difficulty meeting the requirements for state‐of‐the‐art MWIR photodetectors with a blackbody response. Here, we report a fully depleted self‐aligned MoS2‐BP‐MoS2 vdW heterostructure sandwiched between two electrodes. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A/W and low noise‐equivalent power of 2.0 × 10−14 W/Hz1/2, in the MWIR region. A peak specific detectivity of 8.61 × 1010 cmHz1/2/W under blackbody radiation was achieved at room temperature in the MWIR region. Importantly, the effective detection range of our device is twice that of state‐of‐the‐art MWIR photodetectors. Furthermore, the device presents an ultra‐fast response of ∼4 μs both in the visible and short‐wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room‐temperature MWIR photodetectors. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Black Arsenic Phosphorus Mid-Wave Infrared Barrier Detector with High Detectivity at Room Temperature

Shukui Zhang,Xinning Huang,Yan Chen,Ruotong Yin,Hailu Wang,Tengfei Xu,Jiaoyang Guo,Xingjun Wang,Tie Lin,Hong Shen,Jun Ge,Xiangjian Meng,Weida Hu,Ning Dai,Xudong Wang,Junhao Chu,Jianlu Wang

DOI: https://doi.org/10.1002/adma.202313134

IF: 29.4

2024-01-01

Advanced Materials

Abstract:The barrier structure is designed to enhance the operating temperature of the infrared detector, thereby improving the efficiency of collecting photogenerated carriers and reducing dark current generation, without suppressing the photocurrent. However, the development of barrier detectors using conventional materials is limited due to the strict requirements for lattice and band matching. In this study, a high-performance unipolar barrier detector is designed utilizing a black arsenic phosphorus/molybdenum disulfide/black phosphorus van der Waals heterojunction. The device exhibits a broad response bandwidth ranging from visible light to mid-wave infrared (520 nm to 4.6 mu m), with a blackbody detectivity of 2.7 x 1010 cmHz-1/2 W-1 in the mid-wave infrared range at room temperature. Moreover, the optical absorption anisotropy of black arsenic phosphorus enables polarization resolution detection, achieving a polarization extinction ratio of 35.5 at 4.6 mu m. Mid-wave infrared imaging of the device is successfully demonstrated at room temperature, highlighting the significant potential of barrier devices based on van der Waals heterojunctions in mid-wave infrared detection. The unipolar barrier detector allows for the flow of minority carrier current while effectively inhibiting the flow of majority carriers. The existence of a wide-bandgap barrier plays a crucial role in preventing Shockley-Reed-Hall current within the depletion region of photodiodes. Therefore, the barrier structure allows the passage of photocurrent, while effectively blocking dark current. image
High-Sensitivity Infrared Photoelectric Detection Based on WS2 /si Structure Tuned by Ferroelectrics.

Diyuan Zheng,Xinyuan Dong,Jing Lu,Yiru Niu,Hui Wang

DOI: https://doi.org/10.1002/smll.202105188

IF: 13.3

2021-01-01

Small

Abstract:As one of the typical transition-metal dichalcogenides with distinct optical and electrical properties, WS2 exhibits tremendous potential for optoelectronic devices. However, its inherent band gap range limits the application in the infrared region. To overcome this draw-back and improve the sensitivity, P(VDF-CTFE) is used as a ferroelectric gate to control the states of WS2 /Si junctions and achieve an enhanced infrared photodetection. The polarization electric field not only broadens the range of absorption wavelength (405-1550 nm) but also greatly promotes the sensitivity of lateral photovoltaic effect (LPE) (from 198.6 to 503.2 mV mm-1 ). This phenomenon is attributed to the reduction of WS2 band gap and the change of potential barrier at the interface of the junction. Meanwhile, the response speed is improved significantly due to the increase of carrier initial kinetic energy. This new scheme for ferroelectric tuned LPE opens up a way to realize high-sensitivity, ultrafast, and stable infrared photodetection.
Photodetector Based on Heterostructure of Two-Dimensional WSe2/In2Se3.

Bo Liu,Bin Tang,Fengjiao Lv,Yi Zeng,Jianhui Liao,Sheng Wang,Qing Chen

DOI: https://doi.org/10.1088/1361-6528/ab519b

IF: 3.5

2019-01-01

Nanotechnology

Abstract:Heterojunctions formed by two-dimensional (2D) layered semiconducting materials have been studied extensively in the past few years. These van der Waals (vdW) structures have shown great potential for future electronic and optoelectronic devices. However, the optoelectronic performance of these devices is limited by the indirect band gap of multilayer materials and low light absorption of single layer materials. Here, we fabricate photodetectors based on heterojunctions composed of n-type multilayer alpha-indium selenide (In2Se3) and p-type tungsten diselenide (WSe2) for the first time. The direct band gap of multilayer alpha-In2Se3 and type-II band alignment of the WSe2/In2Se3 heterojunction enable high optoelectronic performance of the devices at room temperature in the air. Without light illumination, the dark current is effectively suppressed to 10(-13) A under -1 V bias and a high rectification ratio of 7.37 x 10(3) is observed. Upon laser illumination with a wavelength of 650 nm, the typical heterojunction device exhibits a photocurrent on/off ratio exceeding 1.24 x 10(5), a maximum photo responsivity of 26 mA W-1 and a short photoresponse time of 2.22 ms. Moreover, the heterojunction photodetectors show obvious light response in the wavelength range from 650 nm to 900 nm. The present 2D vdW heterojunctions composed of direct band gap multilayer materials show great potential for future optoelectronic devices.
Multilayer InSe-Te van der Waals heterostructures with ultrahigh rectification ratio and ultrasensitive photoresponse

Fanglu Qin,Feng Gao,Mingjin Dai,Yunxia Hu,Miaomiao Yu,Lifeng Wang,PingAn Hu,Wei Feng

DOI: https://doi.org/10.1021/acsami.0c08461

2020-01-21

Abstract:Multilayer van der Waals (vdWs) semiconductors have great promising application in high-performance optoelectronic devices. However, the photoconductive photodetectors based on layered semiconductors often suffer from large dark current and high external driven bias voltage. Here, we report a vertical van der Waals heterostructures (vdWHs) consisting of multilayer indium selenide (InSe) and tellurium (Te). The multilayer InSe-Te vdWHs device shows a record high forward rectification ratio greater than 107 at room temperature. Furthermore, an ultrasensitive and broadband photoresponse photodetector is achieved by the vdWHs device with an ultrahigh photo/dark current ratio over 104, a high detectivity of 1013, and a comparable responsivity of 0.45 A/W under visible light illumination with weak incident power. Moreover, the vdWHs device has a photovoltaic effect and can function as a self-powered photodetector (SPPD). The SPPD is also ultrasensitive to the broadband spectra ranging from 300 nm to 1000 nm and is capable of detecting weak light signals. This work offers an opportunity to develop next-generation electronic and optoelectronic devices based on multilayer vdWs structures.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science
Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

David Z. Ting,Arezou Khoshakhlagh,Alexander Soibel,Sam A. Keo,Anita M. Fisher,Brian J. Pepper,Linda Höglund,Sir B. Rafol,Cory J. Hill,Sarath D. Gunapala

DOI: https://doi.org/10.1007/s11664-022-09561-3

IF: 2.1

2022-03-23

Journal of Electronic Materials

Abstract:While the n-type InAs/InAsSb type-II strained layer superlattice (T2SLS) has demonstrated excellent detector and focal plane array performance in the mid-wavelength infrared, it is limited in its attainable quantum efficiency (QE) in the long and very long wavelength infrared due to short hole diffusion length and modest absorption coefficient. We explore InAs/InAsSb T2SLS unipolar barrier infrared detectors that contain p-type absorber layers in order to take advantage of the longer electron diffusion length for QE enhancement. We find that while they can achieve enhanced QE, their dark current characteristics are affected by the presence of metallurgical and surface p-n junctions, and are best operated under lower biasing conditions where the tunneling dark currents are less pronounced. We report results on complementary barrier infrared detector structures that use n-type absorbers, a combination of p- and n-type absorbers, and p-type absorbers, with cutoff wavelengths ranging from 10.0 µm to 15.3 µm.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
Superhigh gain InGaN/GaN visible-light photodetector using polarization heterointerface barrier and single-carrier superlattices

Zesheng Lv,Supeng Zhang,Hao Jiang

DOI: https://doi.org/10.1364/oe.527830

IF: 3.8

2024-06-01

Optics Express

Abstract:Zesheng Lv, Supeng Zhang, Hao Jiang Visible-light detection with high sensitivity and strong wavelength selectivity is highly desired in emerging applications. Here, we ... [Opt. Express 32, 22045-22051 (2024)]

optics
Ultralow-Noise MoS 2 /Type II Superlattice Mixed-Dimensional van der Waals Barrier Long-Wave Infrared Detector

Lei Xiao,Changbin Nie,Yongyi Jiang,Jintao Fu,Peng Zhu,Nong Li,Guowei Wang,Haofei Shi,Xingzhan Wei,Tai Sun

DOI: https://doi.org/10.1021/acsami.4c00956

IF: 9.5

2024-06-03

ACS Applied Materials & Interfaces

Abstract:Low-noise, high-performance long-wave infrared detectors play a crucial role in diverse applications, including in the industrial, security, and medical fields. However, the current performance of long-wave detectors is constrained by the noise associated with narrow bandgaps. Therefore, exploring novel heterostructures for long-wavelength infrared detection is advantageous for the development of compact and high-performance infrared sensing. In this investigation, we present a MoS(2)/type II...

materials science, multidisciplinary,nanoscience & nanotechnology
High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

Jinping Chen,Zhen Zhang,Yi Ma,Jiying Feng,Xiaoyu Xie,Xiaoxuan Wang,Aoqun Jian,Yuanzheng Li,Zhuxin Li,Heng Guo,Yizhi Zhu,Qiannan Cui,Zengliang Shi,Chunxiang Xu

DOI: https://doi.org/10.1007/s12274-022-5323-1

IF: 9.9

2022-12-30

Nano Research

Abstract:van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials without the crystal lattice matching constraint have great potential for high-performance optoelectronic devices. Herein, a WS 2 /InSe vdWH photodiode is proposed and fabricated by precisely stacking InSe and WS 2 flakes through an all-dry transfer method. The WS 2 /InSe vdWH forms an n—n heterojunction with strong built-in electric field due to their intrinsic n-type semiconductor characteristics and energy-band alignments with a large Fermi level offset between WS 2 and InSe. As a result, the device displays excellent photovoltaic behavior with a large open voltage of 0.47 V and a short-circuit current of 11.7 nA under 520 nm light illumination. Significantly, a fast rising/decay time of 63/76 μs, a large light on/off ratio of 10 5 , a responsivity of 61 mA/W, a high detectivity of 2.5 × 10 11 Jones, and a broadband photoresponse ranging from ultraviolet to near-infrared (325–980 nm) are achieved at zero bias. This study provides a strategy for developing high-performance self-powered broadband photodetectors based on 2D materials.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

David Z. Ting,Alexander Soibel,Arezou Khoshakhlagh,Sam A. Keo,Anita M. Fisher,Sir B. Rafol,Linda Höglund,Cory J. Hill,Brian J. Pepper,Sarath D. Gunapala

DOI: https://doi.org/10.1063/5.0047937

IF: 4

2021-03-29

Applied Physics Letters

Abstract:We studied long and very long wavelength InAs/InAsSb superlattice barrier infrared detectors that contain p-type absorber layers in order to take advantage of the longer electron diffusion length for quantum efficiency (QE) enhancement. While they can achieve higher QE than devices that use only n-type absorbers, their dark current characteristics are affected by the presence of metallurgical and surface p–n junctions, and are best operated under lower biasing conditions where the tunneling dark currents are less pronounced. Rather than using a p-type absorber only, a barrier infrared detector structure with a combination of p- and n-type absorber sections can benefit from a shallower mesa etch that reduces fabrication demands and also decreases the p-type absorber exposed surface area. We compare four complementary barrier infrared detector structures that use an n-type absorber, a combination of p- and n-type absorbers, or a p-type absorber and briefly report results from a 13.3 μm cutoff focal plane array.

physics, applied
High-performance Mid-Infrared Photodetection Based on Bi2Se3 Maze and Free-Standing Nanoplates.

Shi Luo,JiaLu Li,Tai Sun,Xiangzhi Liu,Dacheng Wei,Dahua Zhou,Jun Shen,Dapeng Wei

DOI: https://doi.org/10.1088/1361-6528/abcd64

IF: 3.5

2020-01-01

Nanotechnology

Abstract:The pursuit of optoelectronic devices operating in mid-infrared regime is driven by both fundamental interests and commercial applications. The narrow bandgap (0.3 eV) of layered Bi2Se3 makes it a promising material for mid-infrared photodetection. However, the weak absorption of mid-infrared optical power and high dark current level restrict its performance. Here, a supply-control technique is applied to modulate the growth mode of Bi2Se3 crystal, and Bi2Se3 crystals with various morphologies are obtained. The nanoplates pattern transits from maze to freestanding when source mass was tuned. Due to the strong infrared absorption and photoelectric conversion efficiency of vertical Bi2Se3 nanoplates, the as-prepared vertical Bi2Se3 nanoplates/Si heterojunction shows excellent photoresponse and extremely low dark current. Among these devices based on different Bi2Se3 morphologies, freestanding nanoplates show the optimal mid-infrared characteristics, namely a photo-to-dark ratio of 2.0 × 104, a dark current of 0.21 pA, a response time of 23 ms, a specific detectivity of 6.1 × 1010 Jones (calculated) and 1.2 × 1010 Jones (measured) under 2.7 μm illumination and at room temperature. Notably, the specific detectivity of our devices are comparable to commercial InGaAs photodetectors. With the tunable- morphology growing technique and excellent photoresponding characteristics, Bi2Se3 nanomaterials are worth attention in optoelectronic field.

Performance of LWIR to VLWIR barrier photodetectors based on M-structure superlattices

Design of uncooled mid-wave infrared detectors based on lead selenide barrier structure

Fast Fabrication of WS<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructures for High-Performance Photodetection

Optimization of thickness and doping of heterojunction unipolar barrier layer for dark current suppression in long wavelength strain layer superlattice infrared detectors

InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors

Vertical Barrier Heterostructures for Reliable and High-Performance Self-Powered Infrared Detection

High‐Performance van der Waals Metal‐Insulator‐Semiconductor Photodetector Optimized with Valence Band Matching

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

Scalable fabrication of long-wave infrared PtSe 2 -G heterostructure array photodetectors

A versatile photodetector assisted by photovoltaic and bolometric effects

Fully Depleted Self‐Aligned Heterosandwiched Van Der Waals Photodetectors

Black Arsenic Phosphorus Mid-Wave Infrared Barrier Detector with High Detectivity at Room Temperature

High-Sensitivity Infrared Photoelectric Detection Based on WS2 /si Structure Tuned by Ferroelectrics.

Photodetector Based on Heterostructure of Two-Dimensional WSe2/In2Se3.

Multilayer InSe-Te van der Waals heterostructures with ultrahigh rectification ratio and ultrasensitive photoresponse

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

Superhigh gain InGaN/GaN visible-light photodetector using polarization heterointerface barrier and single-carrier superlattices

Ultralow-Noise MoS 2 /Type II Superlattice Mixed-Dimensional van der Waals Barrier Long-Wave Infrared Detector

High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

High-performance Mid-Infrared Photodetection Based on Bi2Se3 Maze and Free-Standing Nanoplates.