Abstract:For efficient storage and processing of massive data in the information technology era, spintronic device attracts tremendous attention due to its low power consumption and non-volatile feature. Spin source material, which can efficiently generates spin current, is an important constituent of novel spin-orbit torque device. The efficiency of spin current generation in spin source material directly determines the performances of various spintronic devices. In the past two decades, great progress has been made in exploring high-efficient spin source material systems and understanding the relevant physical mechanisms. A wide variety of materials are explored, ranging from traditional heavy metal and semiconductors to topological insulators and 2D materials. Recently, the material family of transition metal oxides attracts tremendous attention due to its efficient and highly tunable charge-spin conversion intimately related to its emerging novel quantum states and electronic structure. The mechanism of charge-spin conversion generally has two contributions: the bulk spin Hall effect and the spin-momentum locked interface with symmetry-breaking inversion. Novel electronic structures such as topological band structure and spin-momentum locked surface states can realize efficient charge-spin conversion. For example, the Weyl points in SrRuO 3 and the topological Dirac nodal line in SrIrO 3 are predicted to give rise to a large Berry curvature and corresponding spin Hall conductance; the topological surface states can generate spin accumulation due to spin-momentum locking; the Rashba states at the oxide interface such as the 2D electron gas in SrTiO 3 and KTaO 3 can generate spin current by Rashba-Edelstein effect. Furthermore, the entanglement of various degrees of freedom, including spin, charge, lattice and orbit in transition metal oxides lead to the electronic structure being highly tunable by various methods including gate voltage, substrate constraint, thickness, interface engineering, etc. Therefore, charge-spin conversion in transition metal oxides is of great significance in both carrying out fundamental research into modulation of novel electronic structure and exploring its promising potential in future spintronic devices. In this review, we focus on aspects of exotic electronic structures, spin transport mechanism, charge-spin interconversion characterization, efficiency and manipulation in TMOs, and give a perspective on the future development trend.

Emergence of spin–charge conversion functionalities due to spatial and time-reversal asymmetries and chiral symmetry

Quantum Materials for Spin and Charge Conversion

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures

Studying spin–charge conversion using terahertz pulses

Spin-orbitronic materials with record spin-charge conversion from high-throughput ab initio calculations

Chiral spintronics

Spintronics on Chiral Objects

Research progress of novel quantum states and charge-spin interconversion in transition metal oxides

Recent progress on measurement of spin–charge interconversion in topological insulators using ferromagnetic resonance

Chiral-induced unidirectional spin-to-charge conversion

Spin photocurrent and current-induced spin polarization ——New progress in semiconductor spintronics

Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin-Valves

Symmetry analysis with spin crystallographic groups: Disentangling effects free of spin-orbit coupling in emergent electromagnetism

Antiferromagnetic spintronics and beyond

Spintronic devices and applications using noncollinear chiral antiferromagnets

Two-Dimensional Materials for Energy-Efficient Spin-Orbit Torque Devices

Two-dimensional magnetic materials for spintronic applications

All-electrical reading and writing of spin chirality

From Nanoelectronics to Nano-Spintronics.

The Chirality-Induced Spin Selectivity Effect in Asymmetric Spin Transport: From Solution to Device Applications