Abstract:Monolithic integration of silicon-based electronics and photonics could open the door toward many opportunities including on-chip optical data communication and large-scale application of light-based sensing devices in healthcare and automotive; by some, it is considered the Holy Grail of silicon photonics. The monolithic integration is, however, severely hampered by the inability of Si to efficiently emit light. Recently, important progress has been made by the demonstration of efficient light emission from direct-bandgap hexagonal SiGe (hex-SiGe) alloy nanowires. For this promising material, realized by employing a nanowire structure, many challenges and open questions remain before a large-scale application can be realized. Considering that for other direct-bandgap materials like GaAs, surface recombination can be a true bottleneck, one of the open questions is the importance of surface recombination for the photoluminescence efficiency of this new material. In this work, temperature-dependent photoluminescence measurements were performed on both hex-Ge and hex-SiGe nanowires with and without surface passivation schemes that have been well documented and proven effective on cubic silicon and germanium to elucidate whether and to what extent the internal quantum efficiency (IQE) of the wires can be improved. Additionally, time-resolved photoluminescence (TRPL) measurements were performed on unpassivated hex-SiGe nanowires as a function of their diameter. The dependence of the surface recombination on the SiGe composition could, however, not be yet addressed given the sample-to-sample variations of the state-of-the-art hex-SiGe nanowires. With the aforementioned experiments, we demonstrate that at room temperature, under high excitation conditions (a few kW cm<sup>-2</sup>), the hex-(Si)Ge surface is most likely not a bottleneck for efficient radiative emission under relatively high excitation conditions. This is an important asset for future hex(Si)Ge optoelectronic devices, specifically for nanolasers.

Polarized emission from hexagonal-silicon–germanium nanowires

Stimulated emission from hexagonal silicon-germanium nanowires

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Giant Polarization Anisotropy in Optical Transitions of Free-Standing Inp Nanowires

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers

Coexistence of ferroelectricity and ferromagnetism in hex-GeS nanowires

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring

Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton

Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity

Optically reconfigurable polarized emission in Germanium

Optical Properties of Orthorhombic Germanium Sulfide: Unveiling the Anisotropic Nature of Wannier Excitons.

Highly polarized single photon emitter from intrinsic localized excitons in a WSe2/CrSBr heterostructure

Electronic Structure of Nanometer-Scale Semiconductor Wires

Nanosecond Carrier Lifetime of Hexagonal Ge

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface

Linearly polarized remote-edge luminescence in GaSe nanoslabs

Observation of Anomalously Polarized Photoluminescence in Alternating Nanocrystalline Si-amorphous Si Multilayers