Abstract:Ultrafast, high sensitive, low cost photodetectors operating at room temperature sensitive from the deep-ultraviolet to mid-infrared region remain a significant challenge in optoelectronics. Achievements in traditional semiconductors using cryogenic operation and complicated growth processes prevent the cost-effective and practical application of broadband detectors. Alternative methods towards high-performance photodetectors, hybrid graphene-semiconductor colloidal quantum dots have been intensively explored. However, the operation of these photodetectors has been limited by the spectral bandwidth and response time. Here, we have demonstrated hybrid photodetectors operating from the deep-ultraviolet to the mid-infrared region with high sensitivity and ultrafast response by coupling graphene with a p-type semiconductor photosensitizer, nitrogen-doped Ta2O5 thin film. Photons with energy higher than the energy of the defect centers release holes from neutral acceptors. The holes are transferred into graphene, leaving behind ionized acceptors. Due to the advantage of two-dimensional heterostructure including homogeneous thickness, extending in a two-dimensional plane, large contact area between the N-Ta2O5 thin film and graphene, and the high mobility of carriers in graphene, holes are transferred rapidly to graphene and recirculated during the long lifetime of ionized acceptors. The photodetectors achieve a high photo-responsivity (up to 3.0 × 106 A W-1), ultrafast rise time (faster than 20 ns), and a specific detectivity (up to ∼2.2 × 1012 Jones). The work provides a method for achieving high-performance optoelectronics operating in the deep-ultraviolet to mid-infrared region.

Perovskite colloidal quantum-dot enhanced graphene/silicon heterojunction with improved ultraviolet response

Graphene Quantum Dots Enhanced Graphene/si Deep Ultraviolet Avalanche Photodetectors

Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Perovskite Quantum Dots Embedded Composite Films Enhancing UV Response of Silicon Photodetectors for Broadband and Solar‐Blind Light Detection

Quantum dots enhanced UV response of silicon photodetectors for broadband light detection (Conference Presentation)

Graphene–PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity

CsPbBr3 Perovskite Quantum Dots/p-Gan Heterojunction for Ultraviolet-Visible Spectrum Photodetectors

Air-stable and UV-NIR broadband photodetectors utilizing graphene and core/shell quantum dots hybrid heterostructure

Hybrid Graphene/cadmium-Free ZnSe/ZnS Quantum Dots Phototransistors for UV Detection.

Graphene-Ta2O5 heterostructure enabled high performance, deep-ultraviolet to mid-infrared photodetection

A Heterostructured Graphene Quantum Dots/β-Ga2O3 Solar-Blind Photodetector with Enhanced Photoresponsivity

Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection

Application of ZnCdS:Mn/ZnS Quantum Dots in Silicon-Based Ultraviolet Detectors

Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors.

High-performance UV–visible photodetectors based on ZnO/perovskite heterostructures

Enhancement of near ultraviolet spectral range responsibility of silicon photodetectors via additional fluorescent InP/ZnS quantum dots layer

Heterostructured Graphene Quantum Dot/wse 2 /si Photodetector with Suppressed Dark Current and Improved Detectivity

A two-dimensional PtSe2 thin film coupled with a graphene/Si Schottky junction for a high-performance photodetector

Graphene Quantum Dot-Sensitized GaP@ZnO Nanocomposite for High-Performance UV Photodetectors

Extremely Efficient Quantum-Cutting Cr3+, Ce3+, Yb3+ Tridoped Perovskite Quantum Dots for Highly Enhancing the Ultraviolet Response of Silicon Photodetectors with External Quantum Efficiency Exceeding 70%