Abstract:Graphene and other layered materials, such as transition metal dichalcogenides, have rapidly established themselves as exceptional building blocks for optoelectronic applications because of their unique properties and atomically thin nature. The ability to stack them into van der Waals (vdWs) heterostructures with new functionality has opened a new platform for fundamental research and device applications. Nevertheless, near-infrared (NIR) photodetectors based on layered semiconductors are rarely realized. In this work, we fabricate a graphene-MoTe2-graphene vertical vdWs heterostructure on a SiO2/p+-Si substrate by a facile and reliable site-controllable transfer method and apply it for photodetection from the visible to NIR wavelength range. Compared to the layered semiconductor photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has a superior performance, including high photoresponsivity (∼110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE; ∼12.9% at 1064 nm and ∼53.8% at 473 nm), rapid response and recovery processes (a rise time of 24 μs and a fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. We have employed scanning photocurrent microscopy to investigate the photocurrent generation in this heterostructure under various back-gate voltages and found that the two Schottky barriers between the graphenes and MoTe2 play an important role in the photocurrent generation. In addition, the vdWs heterostructure has a uniform photoresponsive area. The photoresponsivity and EQE of the photodetector can be modulated by the back-gate (p+-Si) voltage. We compared the responsivities of thin and thick flakes and found that the responsivity had a strong dependence on the thickness. The heterostructure has promising applications in future novel optoelectronic devices, enabling next-generation high-responsivity, high-speed, flexible, and transparent NIR devices.

Air-stable and UV-NIR broadband photodetectors utilizing graphene and core/shell quantum dots hybrid heterostructure

High-performance graphene–PbS quantum dots hybrid photodetector with broadband response and long-time stability

Graphene–PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Hybrid Graphene/cadmium-Free ZnSe/ZnS Quantum Dots Phototransistors for UV Detection.

Fabrication of graphene: CdSe quantum dots/CdS nanorod heterojunction photodetector and role of graphene to enhance the photoresponsive characteristics

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

High performance near-infrared photodetector based on PbS quantum dots and graphene

Interfacial Engineering of Quantum Dots–Metal–Organic Framework Composite Toward Efficient Charge Transport for a Short‐Wave Infrared Photodetector

High-Performance Near-Infrared Photodetector by Integration of PbS Quantum Dots with 3D-Graphene

Heterostructured Graphene Quantum Dot/wse 2 /si Photodetector with Suppressed Dark Current and Improved Detectivity

Graphene Quantum Dots Enhanced Graphene/si Deep Ultraviolet Avalanche Photodetectors

The Interaction Between Quantum Dots and Graphene: the Applications in Graphene‐Based Solar Cells and Photodetectors

Remarkable Noise Reduction in High-Stability Self-Powered Doped Graphene/Si-Quantum Dot Broadband Photodetectors by Using Graphene Quantum Dots as an Interlayer

Graphene-Ta2O5 heterostructure enabled high performance, deep-ultraviolet to mid-infrared photodetection

Quantum dots/graphene nanohybrids photodetectors: progress and perspective

Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors.

Perovskite colloidal quantum-dot enhanced graphene/silicon heterojunction with improved ultraviolet response

Solution-processed, flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot heterostructures

Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical Van Der Waals Heterostructure.

Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction.