Fabrication of high-performance silicon anode materials for lithium-ion batteries by the impurity compensation doping method

Yang Liu,Zhiqin Su,Yong Wang,Jiaxin Shui,Zhengfei Jin,Bing Bai,Linlin Qiu,Pingfan Du
DOI: https://doi.org/10.1007/s10008-023-05401-4
IF: 2.747
2023-01-28
Journal of Solid State Electrochemistry
Abstract:Due to its high theoretical specific capacity and lower working potential, silicon is regarded as the most promising anode material for the new generation of lithium-ion batteries. As a semiconductor material, silicon undergoes large volume changes on lithium insertion during cycling, causing electrode pulverization and thickening of the SEI film; thus, lowering the conductivity of the silicon anode and limiting the use of silicon-based anode materials. We used semiconductor diffusion technology and an impurity compensation method to convert the intrinsic silicon semiconductor into an impurity semiconductor. The n-type P,B-co-doped silicon anode showed higher electrical conductivity than the n-type P-doped single-crystal silicon. The EIS Nyquist plots indicated that the co-doped silicon anode showed a considerable improvement in conductivity, and an initial capacity of 3037.3 mAh g −1 at a current density of 0.42 A g −1 . After 100 cycles, the specific capacity of the co-doped silicon anode was maintained at 847.7 mAh g −1 , i.e., two and three times greater than that of P-doped and pristine Si anodes, respectively. Furthermore, the fabrication process we report herein is straightforward and quick, facilitating the commercial use of silicon-based negative electrode materials.
electrochemistry
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