Abstract:The energy level offset at inorganic layer–organic layer interfaces and the mismatch of hole/electron mobilities of the individual layers greatly limit the establishment of balanced charge carrier injection inside the emissive layer of halide perovskite light-emitting diodes (PeQLEDs). In contrast with other types of light-emitting devices, namely OLEDs and QLEDs, various techniques such as inserting an electron suppression layer between the emissive and electron transport layer have been employed as a means of establishing charge carrier injection into their respective emissive layers. Hence, in this study, we report the use of a thin layer of Poly(4-vinylpyridine) (PVPy) (an electron suppression material) placed between the emissive and electron transport layer of a halide PeQLEDs fabricated with an inverted configuration. With ZnO as the electron transport material, devices fabricated with a thin PVPy interlayer between the ZnO ETL and CsPbBr3 -based green QDs emissive layer yielded a 4.5-fold increase in the maximum observed luminance and about a 10-fold increase in external quantum efficiency (EQE) when compared to ones fabricated without PVPy. Furthermore, the concentration and coating process conditions of CsPbBr3 QDs were altered to produce various thicknesses and film properties which resulted in improved EQE values for devices fabricated with QDs thin films of lower surface root-mean-square (RMS) values. These results show that inhibiting the excessive injection of electrons and adjusting QDs layer thickness in perovskite-inverted QLEDs is an effective way to improve device luminescence and efficiency, thereby improving the carrier injection balance.

Enhanced efficiency and high temperature stability of hybrid quantum dot light-emitting diodes using molybdenum oxide doped hole transport layer

Improvement of the Stability of Quantum-Dot Light Emitting Diodes Using Inorganic HfOx Hole Transport Layer

Efficient and stable InP quantum-dot light-emitting diodes formed by premixing 2-hydroxyethyl methacrylate into ZnMgO

Solution-Processed Thick Hole-Transport Layer for Reliable Quantum-Dot Light-Emitting Diodes Based on an Alternatingly Doped Structure

Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer

Perovskite-molecule Composite Thin Films for Efficient and Stable Light-Emitting Diodes.

High efficiency quantum-dot light-emitting diodes enabled by boosting hole injection

High-Performance perovskite quantum dots light-emitting diodes with hole transport layer engineering and synergetic outcoupling enhancement

Doping bilayer hole-transport polymer strategy stabilizing solution-processed green quantum-dot light-emitting diodes

Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes

Enhanced performance of flexible quantum dot light-emitting diodes using a low-temperature processed PTAA hole transport layer

Research on interfacial change and regulation of organic light-emitting diodes under thermal stress

Homogeneous Mono-Layer Mixed-Halide Perovskite Quantum Dots Towards Blue Light-Emitting Diodes with Stable Spectra under Continuous Driving

Boosting Efficiency and Stability of Green InP Quantum Dot Light-Emitting Diodes by Interface Dipole Modulation

Record High External Quantum Efficiency of 20% Achieved in Fully Solution-Processed Quantum Dot Light-Emitting Diodes Based on Hole-Conductive Metal Oxides

Design of the Hole-Injection/Hole-Transport Interfaces for Stable Quantum-Dot Light-Emitting Diodes

High Luminance and Stability of Perovskite Quantum Dot Light-Emitting Diodes Via ZnBr2 Passivation and an Ultrathin Al2O3 Barrier with Improved Carrier Balance and Ion Diffusive Inhibition

Stability of Electroluminescent Perovskite Quantum Dots Light‐emitting Diode

Thermally Stable Inverted Organic Light-Emitting Diodes Using Ag-doped 4,7-Diphenyl-1,10-phenanthroline As an Electron Injection Layer

Enhanced Performance of Inverted Perovskite Quantum Dot Light-Emitting Diode Using Electron Suppression Layer and Surface Morphology Control

Solution Process Feasible Highly Efficient Organic Light Emitting Diode with Hybrid Metal Oxide Based Hole Injection/Transport Layer