Impacts of the Lattice Strain on Light Emission in Layered Perovskite Thin flakes
Zhonglong Zhang,Runhui Zhou,Meili Li,Yan‐Fang Zhang,Yepei Mo,Yang Yu,Zhangsheng Xu,Boning Sun,Wenqiang Wu,Qiuchun Lu,Nan Lu,Jin Xie,Xiaoming Mo,Shixuan Du,Caofeng Pan
DOI: https://doi.org/10.1002/adom.202401565
IF: 9
2024-09-01
Advanced Optical Materials
Abstract:In this work, an efficient manipulation of light emission is revealed in thin‐layered 2D perovskite strongly correlated to layer numbers of [PbI6]4− octahedron (n) and [C6H5(CH2)2NH3]2(CH3NH3)n‐1PbnI3n+1 (N) by applying uniaxial strains (ɛ) via bending the flexible substrate. These results establish the atomic‐scale relationships between structure, optical bandgap, and carrier dynamics, providing important data for advancing the development of highly efficient optoelectronic devices. Strain engineering, as a non‐chemical tuning knob, can enhance the performance of semiconductor devices. Here, an efficient manipulation of light emission is revealed in thin‐layered 2D perovskite strongly correlated to layer numbers of [PbI6]4− octahedron (n) and [C6H5(CH2)2NH3]2(CH3NH3)n‐1PbnI3n+1 (N) by applying uniaxial strains (ɛ) via bending the flexible substrate. As increases from 1 to 3, an efficient light emission redshift (ɛ from −0.97% to 0.97%) is observed from bandgap shrinkage, and the shrinkage rate increases from 1.97 to 10.38 meV/%, which is attributed to the predominant uniaxial intralayer deformation due to the anisotropy of the [PbI6]4− octahedron lattice strain. Conversely, as increases from 7 to 48 for n = 3, the deformation related to bandgap shrinkage rate is more prominent in small‐N flakes ( ≈ 7, 15.2 meV/%) but is easily offset in large‐N flakes ( ≈ 48, 7.7 meV/%). This anisotropic lattice deformation, meanwhile, inevitably modulates the carrier recombination dynamics of [C6H5(CH2)2NH3]2(CH3NH3)n‐1PbnI3n+1, which is essential for the development of highly efficient photoelectronic devices.
materials science, multidisciplinary,optics