High-throughput screening of transition metal doping and defect engineering on single layer SnS2 for water splitting hydrogen evolution reaction

Ruixin Xu,Tingting Bo,Shiqian Cao,Nan Mu,Yanyu Liu,Mingyan Chen,Wei Zhou
DOI: https://doi.org/10.1039/d2ta04254a
IF: 11.9
2022-08-30
Journal of Materials Chemistry A
Abstract:Doping and defect engineering have been widely used to improve the hydrogen evolution reaction (HER) activity of catalysts. Herein, the improved HER activity of SnS2 nanosheets was systematically investigated. With transition metal (TM) doping, the basal plane S atom can be significantly activated for HER. The calculated hydrogen adsorption free energy (∆G(H*)) of V, Mn, Ni, Tc@SnS2 are close to 0 eV. Furthermore, the hollow site of these nanosheets can be easily activated after introducing S vacancy and these materials need smaller cathode voltage to introduce S vacancy than pristine SnS2 nanosheet. Surprisingly, ∆G(H*) can reach 0.06 eV for pristine SnS2 nanosheet by introducing 4.17% S vacancy concentration, which is better than Platinum (Pt) catalysts. In addition, a corrected pz band center model with a new descriptor φ was proposed for the prediction of HER activity. Our work offers a good understanding of the effects of TM doping and defect engineering on the improvement of HER activity at the atomic level.
materials science, multidisciplinary,chemistry, physical,energy & fuels
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