Defect and doping engineered Ga 2 XY as electrocatalyst for hydrogen evolution reaction: First principles study
Jingming Gao,Baonan Jia,Jiaxiang Zhao,Feng Wei,Jinbo Hao,Wenhua Lou,Xiaoning Guan,Wei Chen,Pengfei Lu
DOI: https://doi.org/10.1016/j.ijhydene.2024.01.327
IF: 7.2
2024-02-04
International Journal of Hydrogen Energy
Abstract:Recently, chalcogenides have attracted much attention as electrocatalysts in hydrogen evolution reaction (HER). However, few studies have been conducted on the electrocatalytic properties of gallium oxides and chalcogenides. In this paper, a Ga 2 XY (X ≠ Y, X, Y=O, S, Se, Te) defect structure doped by non-metal B, C, N, P, Si, and As have been designed. According to the study, the doping of non-metal atoms can significantly enhance their HER properties, the Ga 2 OSe-As Xi -Xi structure and Ga 2 SeTe-Si Xi -NM structure possess intensely excellent HER properties in this study with the Gibbs free energy of 0.01 eV and 0.00 eV, respectively. It is found that the Ga 2 SeTe structure has a more concentrated electron transfer range compared to the Ga 2 OSe structure, leading to a superior HER performance. This work provides a new idea for the study of HER electrocatalytic performance of the Ga 2 XY system, and it is expected to be applied to HER catalysts affordably and efficiently.
energy & fuels,electrochemistry,chemistry, physical