High‐purity synthesis of all‐inorganic CsPbBr3 perovskite powder assisted by solubilizing organic ligand and its application to perovskite solar cells

Hyeon Ju Tak,Ji Hyeon Lee,Yongseok Yoo,Hee Jeong Park,Woosum Cho,Sungkoo Lee,Jea Woong Jo,Seunghwan Bae
DOI: https://doi.org/10.1002/er.8193
IF: 4.6
2022-06-05
International Journal of Energy Research
Abstract:New synthesis method for all‐inorganic perovskite powder was developed, which production cost was more than 10 times reduced than conventionally used precursors. Perovskite solar cells prepared from our perovskite powder showed enhanced efficiency and stability compared with devices from conventional metal halide precursors. Perovskite film from our powder provided an improved film morphology and a reduction of defect sites than the film from conventional precursors Summary All‐inorganic perovskites have shown promising performances with high thermal stabilities when used as photoactive materials for optoelectronic applications. Therefore, the development of cost‐effective, high‐quality, and massive production methods of all‐inorganic perovskites has emerged as an important task for the commercialization of perovskite‐based optoelectronics. We developed a facile preparation method for all‐inorganic CsPbBr3 perovskite powder by incorporating an organic ligand that enables Cs precursor to maintain high solubility during synthesis. The synthesized CsPbBr3 powder was verified for its cost‐effectiveness and high purity due to an appropriate selection of thermally‐decomposable precursors and effective removal of residue during the purification step. Furthermore, we found that the CsPbBr3 film prepared from our synthesized powder provided an improved homogeneity and a reduction of defects compared with that prepared from conventional metal halide precursor, which is attributed to the suppression of non‐stoichiometry and impurity phase. Therefore, the perovskite solar cells fabricated using our CsPbBr3 powder offered improved power conversion efficiency (PCE) of 8.19% and stability than the control device from metal halide precursor (5.90%).
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