Improved opto-electro-mechanical properties of Cs2TeBr6 double perovskite by Ge doping

Jiahao Li,Guoqing Zou,Liping Sun,Jing Chang

DOI: https://doi.org/10.1063/5.0122021

IF: 2.877

2022-11-28

Journal of Applied Physics

Abstract:Toxicity and instability of lead-based perovskite materials are two key issues for emerging inorganic perovskite solar cells. Therefore, the development of stable, lead-free inorganic perovskite materials has attracted great attention in the photovoltaic field. In this study, we report the effects of Ge-doped on the structural stability, mechanical, and optoelectronic properties of Cs 2 TeBr 6 double perovskite by first-principles calculations. The results show that the Cs 2 Te 1−x Ge x Br 6 (x = 0, 0.25, 0.5, 0.75, and 1) doped system is structurally and mechanically stable, and the lattice constants decrease gradually with the increase of Ge 4+ doping concentration. The Cs 2 TeBr 6 undergoes a transition from brittleness to ductility after doping with Ge element, which is beneficial to the fabrication of flexible photovoltaic and optoelectronic devices. Especially, the perovskite derivative Cs 2 Te 0.25 Ge 0.75 Br 6 has the highest ductility. Electronic structure calculations indicated that a transition from indirect to direct bandgap occurred when the Ge 4+ doping concentration was increased from 0.25 to 0.5, which is beneficial to light absorption. According to the Shockley–Queisser limit, Cs 2 Te 0.25 Ge 0.75 Br 6 is the best candidate for the solar cell absorber material due to the suitable bandgap (1.31 eV). Cs 2 Te 0.75 Ge 0.25 Br 6 (1.46 eV) and Cs 2 Te 0.5 Ge 0.5 Br 6 (1.23 eV) also show great potential as a solar cell absorber. Furthermore, an optical analysis revealed that the optical properties of the Cs 2 Te 1−x Ge x Br 6 doped system were improved with the doping of Ge 4+ concentration.

physics, applied