Abstract:Topological insulators (TIs) hold compelling promise for diverse applications in advanced nanodevices and catalysis, owing to their protected edge and surface states. Under operational conditions, TI materials are typically fabricated into (ultra-)thin films with highly crystalline nanodomains. The exposed facets exhibit distinct surface properties that vary with respect to the size of the nanocrystals. Herein, we investigate the finite-size effects on the topological phase transition within the prototypical Bi2Se3 family of TIs via first-principles calculations. Thin films exposing the three lowest-energy surfaces are simulated by semi-infinite slabs with tunable thicknesses. We propose that the finite-size effects originate from electron confinement in the cutoff direction. The increase in film thickness then counteracts these confinement effects, resulting in a monotonically decreasing band gap evaluated at the spin−orbit decoupled level. The bulk domains of various thin films are found to be inherently related to one another through the band inversion. This allows for the prediction of the required thickness for attaining non-trivial band topology in the bulk domain of TI nanocrystals. A systematic scheme is proposed to determine the required size for the topological phase transition on various facets of TI nanocrystals. Our findings provide a unique understanding of the finite-size effects on various surfaces of TI thin films. In addition, the actual manifestation of topological surface states on the side surfaces is affected significantly by the co-existing dangling bonds produced by surface cuts. Therefore, surface relaxation plays a crucial role in disentangling the trivial and non-trivial surface states.

First-principles calculations of the surface states of doped and alloyed topological materials via band unfolding method

First-principles study of the topological surface states of -Sn(111)

Observation of Topological Crystalline Insulator phase in the lead tin chalcogenide Pb1-xSnxTe material class

First-Principles Studies of the Three-Dimensional Strong Topological Insulators Bi2te3, Bi2se3 and Sb2te3

Applications of First-Principles Method in the Research on Topological Materials

ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2 n Te4+3 n family

ARPES Investigation of the Electronic Structure and Its Evolution in Magnetic Topological Insulator MnBi2+2nTe4+3n Family.

First-principles calculations for topological quantum materials

Topological insulators from the Perspective of first-principles calculations

(111) Surface States of SnTe

Hybridization-induced gapped and gapless states on the surface of magnetic topological insulators

Observing Electronic Structures on Ex-Situ Grown Topological Insulator Thin Films

Electronic Structures and Surface States of the Topological Insulatorbi1−xsbx

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Unfolding band structure and topological property of 3 d transition metal doped monolayer CrTe2: A first-principle calculation

Band Engineering of Dirac Surface States in Topological-Insulator-Based Van Der Waals Heterostructures.

Understanding the Adiabatic Evolution of Surface States in Tetradymite Topological Insulators under Electrochemical Conditions

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Emergence of Band Inversion in the Nanodomain and Relaxation Effects on the Surface States of the Bi2Se3 Topological Insulator Family

Unoccupied Topological Surface State in MnBi_2Te_4

On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family