2D Ferroelectric Metal–Organic Frameworks for Ultralow Power Field Effect Transistors
Zhenhui Xian,Changjian Li,Yangda Dong,Mengping Peng,Ye Yu,Yuan Zhang,Boyuan Huang,Gaokuo Zhong,Shuhong Xie,Jiangyu Li
DOI: https://doi.org/10.1002/adfm.202409388
IF: 19
2024-11-28
Advanced Functional Materials
Abstract:The successful development of 2D ferroelectric metal‐organic frameworks (MOF) nanosheets, with a large polarization retained down to 7 nm, enables the fabrication of ferroelectric field effect transistors (FeFETs) with ultralow power consumption and tunable memory windows, ideal for next‐generation memory, and computing devices. 2D ferroelectrics open a new realm of nonvolatile memory and computing devices, while metal–organic frameworks (MOF) offer tremendous possibilities to design and optimize ferroelectric performance. Integrating a MOF ferroelectric gate with a semiconducting channel provides new strategy toward ultralow power ferroelectric field effect transistors (FeFETs), yet no 2D MOF is experimentally demonstrated to be ferroelectric yet. Here, the study successfully develops 2D ferroelectric MOF nanosheets, {CuL2(H2O)2(NO3)2(H2O)1.5·(CH3OH)}∞ wherein L denotes PhPO(NH4Py)2, abbreviated as {CuIIL2}n‐MOF, and confirm its ferroelectricity down to 7 nm thickness. A large polarization of ≈14.2 μC cm−2, small coercive field of ≈33.3 V μm−1, and excellent endurability >106 cycles are found in 2D {CuIIL2}n‐MOF nanosheets. This enables to fabricate FeFETs using 2D {CuIIL2}n‐MOF as the gate and MoS2 as the channel, achieving an on/off ratio of 107 with ultralow off‐state current of 100 fA and tunable memory window, making it exceptional among known FeFETs and very promising for next‐generation ultralow power memories and computing devices
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology