Abstract:Flexoelectricity is an electromechanical coupling effect between the polarization and strain gradient in all dielectrics regardless of point group symmetry. Due to its significant influence on material behavior at the nanoscale, the flexoelectric effect has attracted more and more attention in recent years. In this paper, a real space phase field model for the flexoelectric effect in ferroelectric materials is developed by using isogeometric analysis (IGA). The IGA employs the same smooth and high-order basis functions to describe both the geometry of material and the solution of phase field, which is able to give an accurate and efficient description of the flexoelectric effect in ferroelectrics with arbitrary geometrical shapes and boundary conditions. To this end, phase field simulations on the effect of flexoelectricity are conducted for nanoscale ferroelectrics with different geometrical shapes and boundary conditions. The simulation results show that the flexoelectric effect has significant influence on the domain structures and domain switching of ferroelectric materials at the nanoscale. For ferroelectric nanobeam under bending load, due to the flexoelectric effect, the mechanical bending can break the symmetry of hysteresis loop between electric field and polarization. As for ferroelectric nanodots, the flexoelectric effect increases the magnitude of spontaneous polarizations and results in the tilting of polarization vortex. In addition, out-of-plane components appear in the polarization vortex of ferroelectric nanodots due to the flexoelectric effect, which increases the coercive field for the switching of polarization vortex and changes the switching process significantly. The present work not only presents an effective nonlocal model for the domain evolution in ferroelectric materials with the consideration of the flexoelectric effect, but also asymmetric hysteresis loop between polarization and external electric field for ferroelectric beam, and new switching behavior of the polarization vortex in ferroelectric nanodots due to the flexoelectric effect.

Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films

Defect driven flexo-chemical coupling in thin ferroelectric films

An Isogeometric Approach to Flexoelectric Effect in Ferroelectric Materials

Defect-Strain Engineering for Multiferroic and Magnetoelectric Properties in Epitaxial (110) Ferroelectric Lead Titanate

Phase Field Modeling of Flexoelectric Effects in Ferroelectric Epitaxial Thin Films

Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

Flexoelectric Effect in Thin Films: Theory and Applications

Ferroelectric Polarization and Defect-Dipole Switching in an Epitaxial (111) BiFeO3 Thin Film

Origin of defects induced large flexoelectricity in ferroelectric ceramics

Giant optical enhancement of strain gradient in ferroelectric thin films and its physics origin

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

Large elasto-optic effect and reversible electrochromism in multiferroic BiFeO3

Atomic-Scale Tunable Flexoelectric Couplings in Oxide Multiferroics

Atomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectrics

Exploring topological defects in epitaxial BiFeO3 thin films.

Controllable Defect Driven Symmetry Change and Domain Structure Evolution in BiFeO3 with Enhanced Tetragonality

Controllable Defect Engineered True Super-Tetragonal BiFeO3 with Enhanced Tetragonality

Controlling Magnetoelectric Coupling by Nanoscale Phase Transformation in Strain Engineered Bismuth Ferrite.

Revealing the Flexoelectricity in the Mixed-Phase Regions of Epitaxial BiFeO3 Thin Films

Flexoelectric control of a ferromagnetic metal