Abstract:The Tauc plot is probably the most commonly used method to determine the size of bandgaps. This perspective shows that, despite the establishment of this method, the Tauc plot should be used with caution, since various peculiarities in the electronic structure can prevent its application. The Tauc plot is a method originally developed to derive the optical gap of amorphous semiconductors such as amorphous germanium or silicon. By measuring the absorption coefficient α(hν) and plotting (αhv)12 versus photon energy hν, a value for the optical gap (Tauc gap) is determined. In this way non‐direct optical transitions between approximately parabolic bands can be examined. In the last decades, a modification of this method for (poly‐) crystalline semiconductors has become popular to study direct and indirect interband transitions. For this purpose, (ahν)n (n = 12 , 2) is plotted against hν to determine a value of the electronic bandgap. Due to the ease of performing UV–vis measurements, this method has nowadays become a standard to analyze various (poly‐) crystalline solids, regardless of their different electronic structure. Although this leads partially to widely varying values of the respective bandgap of nominally identical materials, there is still no study that critically questions which peculiarities in the electronic structure prevent a use of the Tauc plot for (poly‐) crystalline solids and to which material classes this applies. This study aims to close this gap by discussing the Tauc plot and its limiting factors for exemplary (poly‐) crystalline solids with different electronic structures.

Can Tauc plot extrapolation be used for direct-band-gap semiconductor nanocrystals?

Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with Ultraviolet-Visible Spectroscopy: A Case Study for Cubic Boron Arsenide

Tauc-plot scale and extrapolation effect on bandgap estimation from UV–vis–NIR data – A case study of β-Ga2O3

Limitations of the Tauc Plot Method

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with UV-Vis: A Case Study for Cubic Boron Arsenide

A statistical theory of the photoluminescent determination of the band gap energy in nano-crystals and layered materials

Considerations about the determination of optical bandgap from diffuse reflectance spectroscopy using the tauc plot

Calculation of the Bandgap and of the Type of Interband Transitions in Tetrahedral Amorphous Carbon Using Electron Energy Loss Spectroscopy

Non-equilibrium Green's function predictions of band tails and band gap narrowing in III-V semiconductors and nanodevices

An Excitonic Approach to the Intraband THz Response of Semiconductor Nanostructures

Band-Edge Energy Levels of Dynamic Excitons in Cube-Shaped CdSe/CdS Core/Shell Nanocrystals.

Energy Transfer of Biexcitons in a Single Semiconductor Nanocrystal

Predicting Excitonic Gaps of Semiconducting Single Walled Carbon Nanotubes From a Field Theoretic Analysis

Interband Transition Physics from the Absorption Edge in GaN: New Prospects from Numerical Analysis

Electron structure and optical absorption properties of cubic and orthorhombic NaTaO3 by density functional theory

Harnessing the Shape-Induced Optical Anisotropy of a Semiconductor Nanocrystal: A New Type of Intraband Absorption Spectroscopy

Modeling to study the shape, dimensionality and crystal structure dependence of energy band gap in nanosized semiconductors

Determining Locations of Conduction Bands and Valence Bands of Semiconductor Nanoparticles Based on Their Band Gaps

Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

Behavior of exciton in direct−indirect band gap Al x Ga 1−x As crystal lattice quantum wells