Phosphorescent Dye Sensitized Quantum‐Dot Light‐Emitting Diodes with 37% External Quantum Efficiency
Yanping Wang,Yusen Yang,Dingke Zhang,Tong Zhang,Shiyi Xie,Yu Zhang,Yong‐Biao Zhao,Xiaoyun Mi,Xiuling Liu
DOI: https://doi.org/10.1002/adma.202306703
IF: 29.4
2023-09-20
Advanced Materials
Abstract:Exciton harvesting is of paramount importance for quantum‐dot light‐emitting diodes (QLEDs). Direct exciton harvesting by quantum dots (QDs) emitting layer suffers from poor hole injection due to the low conduction bands and valence bands of QDs, leading to unbalanced electron‐hole injection and recombination. To address this issue, here we report an exciton sensitizing approach, where excitons form on a phosphorescent dye doped layer which then transfer their energies to adjacent QDs layer for photon emission. Due to the very efficient exciton formation and energy transfer processes, higher device performance could be achieved. To demonstrate the above strategy, red QLEDs with a phosphorescent dye Iridium (III) bis (2 – methyldibenzo – [f, h] quinoxaline) (acetylacetonate), Ir(MDQ)2(acac) doped hole transporting layer were fabricated and studied. At a doping concentration of 10 wt.%, the best device achieves record high current efficiency, power efficiency and external quantum efficiency of 37.3 cd A−1, 41.0 lm W−1 and 37.0%, respectively. Simultaneously, the efficiency roll‐off characteristic was greatly improved that 35.0% EQE can be well remained at high luminance level of 450 000 cd m−2. Moreover, the devices also exhibit good stability and reproducibility. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology