Abstract:In two dimensional materials, substitutional doping during growth can be used to alter the electronic properties. Here, we report on the stable growth of p-type hexagonal boron nitride (h-BN) using Mg-atoms as substitutional impurities in the h-BN honeycomb lattice. We use micro-Raman spectroscopy, angle-resolved photoemission measurements (nano-ARPES) and Kelvin probe force microscopy (KPFM) to study the electronic properties of Mg-doped h-BN grown by solidification from a ternary Mg-B-N system. Besides the observation of a new Raman line at ~1347 cm-1 in Mg-doped h-BN, nano-ARPES reveals p-type carrier concentration. Our nano-ARPES experiments demonstrate that the Mg dopants can significantly alter the electronic properties of h-BN by shifting the valence band maximum about 150 meV toward higher binding energies with respect to pristine h-BN. We further show that, Mg doped h-BN exhibits a robust, almost unaltered, band structure compared to pristine h-BN, with no significant deformation. Kelvin probe force microscopy (KPFM) confirms the p-type doping, with a reduced Fermi level difference between pristine and Mg-doped h-BN crystals. Our findings demonstrate that conventional semiconductor doping by Mg as substitutional impurities is a promising route to high-quality p-type doped h-BN films. Such stable p-type doping of large band h-BN is a key feature for 2D materials applications in deep ultra-violet light emitting diodes or wide bandgap optoelectronic devices.

Electronic Structure and Ferromagnetic Properties of MgDoped Cubic BN from First-Principles Calculation

Structural and Thermodynamic Properties of MgB2 from First-Principles Calculations

Electronic and magnetic properties of metal-doped BN sheet: A first-principles study

Two-dimensional Antiferromagnetic Boron Form First Principles

First-principles study on the electronic structure and optical properties of MgCNi3

First Principle Calculation of Magnetic Properties of Doped Mn:ZnGa2S4

The first principle study of magnetic, electronic, and optical properties of Co- and Mn-doped boron nitride nanosheets

First-Principles Study Of The Noble Metal-Doped Bn Layer

Study on the Electronic Structure of High-T-C Superconductor Mgb2

First-Principle Study on Electronic Structure and Magnetism in Doped Boron Phosphide Nanosheet

A novel two-dimensional MgB6 crystal: metal-layer stabilized boron kagome lattice

First-principle Approach Based Bandgap Engineering for Cubic Boron Nitride Doped with Group IIA Elements

First principles study structural and magnetic properties of Mn doped MgO

High p Doped and Robust band structure in Mg-doped Hexagonal Boron Nitride

Computational study on the impact of Nb doping on electronic structure, magnetic and optical properties of hexagonal bilayer BN

Semiconducting Antiferromagnetism in Mgh2 Doped with 3d Transition Metals: A First-Principles View

Magnetism in BN Nanotubes Induced by Carbon Doping

Electronic and Magnetic Properties of Substituted BN Sheets: a Density Functional Theory Study.

Structural and Electronic Properties of the Magnetic and Nonmagnetic X 0.125 Mg 0.875 B 2 (X = Nb, Ni, Fe) Materials: A DFT/HSE06 Approach to Investigate Superconductor Behavior

Superconductivity and Topological Properties of MgB2 -Type Diborides from First Principles

Graphitic-BN Based Metal-free Molecular Magnets From A First Principle Study