Abstract:Bi2Te3 films always exhibit n-type transport characteristics even under the Bi-rich condition, which, however, was not clarified clearly. Herein, by virtue of advanced techniques such as scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, scanning transmission electron microscopy, and x-ray photoelectron spectroscopy, we are able to identify the structural evolution on the atomic scale for Bi-rich Bi2Te3 films. The excess of Bi content will lead to the formation of p-type BiTe antisite defects; however, there is a doping limit for the excess of Bi to form BiTe antisites. Beyond this limit, the excess of Bi will form the n-type Bi2 planar defects in the van der Waals gap, the excellent electron donors, which can enhance the electron density by over one order of magnitude and up to the 1021 cm−3 range for Bi-rich Bi2Te3 films. Benefiting from the remarkable increase in the electron density and the suppression of carrier intrinsic excitations, Bi2Te3 films with Bi2 planar defects possess a much improved thermoelectric power factor, with a maximum value of 1.4 mW m−1 K−2 at 450 K, showing about 130% enhancement compared to that of the film without Bi2 intercalations. The discovery opens a new avenue to improve the thermoelectric properties of Bi2Te3 films utilizing the Bi2 planar defects.

CdTe:Bi films deposited by closed space vapor transport under variable pressure and doping levels: evidences of the possible formation of an intermediate band

CdTe thin film solar cells with a SnTe buffer layer in back contact

Graded composition Cd$_x$Zn$_{1-x}$Te films grown by Isothermal Close Space Sublimation technique

Bandgap variation in semiconductor thin films of the solid solution (CdTe)1-x(In 2 Te 3 )x deposited by RF sputtering

Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres

Determination of Band Alignment at the CdTe/SnTe Heterojunction Interface for CdTe Thin-Film Solar Cells

Band Shift of Pb1-Xsrx Te Thin Film and Its Band Alignment Using Synchrotron Radiation Photoelectron Spectroscope

Structural and optical properties of Te doped CdS films

Investigation of Sub‐Bandgap Emission and Unexpected n‐Type Behavior in Undoped Polycrystalline CdSexTe1‐x

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3Thin Film Prepared Via Magnetron Sputtering

Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure

Properties of CdTe layers deposited by a novel method -Pulsed Plasma Deposition

Texture-tuned Growth of CdTe Thin Films by Closed-Space Sublimation Technique

Coevaporated Cd1-xMgxTe Thin Films for CdTe Solar Cells

Physico-chemical analysis of the properties and stability of CdS and CdS:O to be applied in thin-film solar cells

Microstructure, electrical and optical properties of Cd-doped CdTe thin films deposited by close-spaced-sublimation

Grain boundary strain localization in CdTe solar cell revealed by Scanning 3D X-ray diffraction microscopy

Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics

Evolution of atomic structure and electronic transport properties in n-type Bi 2 Te 3 films via Bi 2 planar defects

Effects of Oxidation and CdCl2 Treatment on the Electronic Properties of CdTe Polycrystalline Films