Analytical approach for polar magnetooptics in multilayer spin-polarized light emitting diodes based on InAs quantum dots

Wenjian Wang,Kobra Hasanirokh,Jalil Manafian,Mostafa Abotaleb,Yintang Yang
DOI: https://doi.org/10.1007/s11082-021-03461-2
IF: 3
2022-02-01
Optical and Quantum Electronics
Abstract:To explain the magneto-optical (MO) data in GaAs/InAs/GaAs/MgO/Co/Au thin-film structures, we modeled the optical interactions within magnetic layered structures. Firstly, for a numerical simulation of the MO effects, a full matrix model based on Yeh's formalism is employed, and secondly for the comparison between different magnetic and non-magnetic layer is considered different multilayer structures. We analyze the MO effects during vertical electron transport in spin-polarized light-emitting diode (spin-LEDs) devices. We observe the outside fields depend mainly on structural parameters. When we considered Co/Fe layers, we found that the intensities of emitted waves polarized along ydocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$y$$end{document} and +450documentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$${+45}^{0}$$end{document} directions are significantly increased during transport through the active region of the device, while for Co/Ag/Au structure these quantities have lower magnitudes and sandwich structure Au/Co/Au has the lowest values.
engineering, electrical & electronic,optics,quantum science & technology
What problem does this paper attempt to address?