Abstract:Hexagonal boron nitride (h-BN), an insulating two-dimensional (2D) layered material, has attracted increasing interest due to its electrical screening effect, high-temperature-resistant gas barrier properties, and other unique applications. However, the presence of grain boundaries (GBs) in h-BN is a hindrance to obtain these properties. Here, we demonstrate the epitaxial growth of monolayer h-BN by chemical vapor deposition (CVD) on Ni(111) thin films deposited on c-plane sapphire. The Ni(111) films showed higher thermal stability than Cu(111) and Cu-Ni(111) alloy films, allowing us to perform CVD growth at a high temperature of 1100 °C. This resulted in an increase of the h-BN grain sizes to up to 0.5 millimeter, among the highest reported so far, and in a well-defined triangular grain shape. Low-energy electron microscopy (LEEM) revealed the epitaxial relationship between h-BN and the underlying Ni(111) lattice, leading to a preferential alignment of the h-BN grains. Both the large grain size and the alignment are expected to facilitate the synthesis of h-BN with a low density of GBs. We also found that the addition of N2 gas during the CVD improves the crystalline shape of the h-BN grains, changing from an irregular, truncated to a sharp triangle. The growth behavior of monolayer h-BN is further discussed in terms of the dependences on growth temperature and pressure, as well as on the structural evolution of the Ni metal catalyst. Our findings not only help understand the h-BN growth mechanism but also offer a new route to grow high-quality, monolayer h-BN films.

Synthesis of Few-Layer Hexagonal Boron Nitride for Magnetic Tunnel Junction Application

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments.

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Hexagonal Boron Nitride on III-V Compounds: A Review of the Synthesis and Applications

Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

Ultra-thin Van der Waals Magnetic Tunnel Junction Based on Monoatomic Boron Vacancy of Hexagonal Boron Nitride

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures

Understanding vapor phase growth of hexagonal boron nitride

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Atomically thin boron nitride: a tunnelling barrier for graphene devices

Synthesis of hexagonal boron nitride 2D layers using polymer derived ceramics route and derivatives

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications