Giant anomalous Hall effect in Fe-based microwires grown by focused-electron-beam-induced deposition

R Córdoba,R Lavrijsen,A Fernández-Pacheco,M R Ibarra,F Schoenaker,T Ellis,B Barcones-Campo,J T Kohlhepp,H J M Swagten,B Koopmans,J J L Mulders,J M De Teresa
DOI: https://doi.org/10.1088/0022-3727/45/3/035001
2011-12-23
Abstract:We report the temperature dependence of the resistivity, the anisotropic magnetoresistance and the Hall effect of iron microwires grown by focused-electron-beam-induced deposition. By modifying the growth conditions in a controllable way, we study wires with iron compositions varying from 45% to 70%, which present different electrical conduction mechanisms, with resistivity values differing over three orders of magnitude. The magnetoresistance depends highly on the composition, and it can be understood by a subtle interplay between the anisotropic magnetoresistance and intergrain magnetoresistance due to their complex microstructure, consisting of an iron–carbon–oxygen amorphous matrix. A giant value for the anomalous Hall effect is found, which we explain by a large contribution of the skew scattering mechanism. The present results emphasize the correlation between the exotic microstructure of the microwires, and their magnetotransport properties.
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