Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Gunawan Witjaksono,Muhammad Junaid,Mohd Haris Khir,Zaka Ullah,Nelson Tansu,Mohamed Shuaib Bin Mohamed Saheed,Muhammad Aadil Siddiqui,Saeed S. Ba-Hashwan,Abdullah Saleh Algamili,Saeed Ahmed Magsi,Muhammad Zubair Aslam,Rab Nawaz
DOI: https://doi.org/10.3390/molecules26216424
IF: 4.6
2021-10-25
Molecules
Abstract:Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.
chemistry, multidisciplinary,biochemistry & molecular biology
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