Formation and development of dislocation in graphene

Gun-Do Lee,Euijoon Yoon,Nong-Moon Hwang,Cai-Zhuang Wang,Kai-Ming Ho
DOI: https://doi.org/10.1063/1.4775671
IF: 4
2013-01-14
Applied Physics Letters
Abstract:The formation and development processes of dislocation in graphene are investigated by performing tight-binding molecular dynamics (TBMD) simulation and ab initio total energy calculation. It is found that the coalescence of pentagon-heptagon (5-7) pairs with vacancy defects induces the formation of dislocation due to the separation of two 5-7 pairs. In TBMD simulations, adatoms are ejected and evaporated from graphene surface so that the dislocation is developed. It is observed that diffusing carbon atoms nearby dangling bonds help non-hexagonal rings change into stable hexagonal rings. These results might give some ideas for the control of structural properties by inducing defect structures.
physics, applied
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