Comparative Analysis of Dielectric Engineered Tunnel FET for Biosensing Applications
Solomon Kebede Jorga,Avtar Singh,Dereje Tekilu
DOI: https://doi.org/10.1007/s12633-022-02107-6
IF: 3.4
2022-09-21
Silicon
Abstract:Among several types of innovative bio-sensing technologies, label free dielectric modulated field-effect transistor (DM-FET) based biosensors, stand out because of their appealing properties, including ultra-sensitivity detection, mass-production capacity, low-cost manufacturing, and batch testing facility. This work investigates the Dielectric Modulated Tunnel Field Effect Transistor (DM-TFET) biosensor for low power applications and performance characterization. ATLAS TCAD simulator tool from SILVACO is used to simulate and characterise the biosensor. In this work we proposed and compared three different types of double gate (DG) TFET based biosensors, i.e., both side cavity (DG_BSC_TFET), drain side cavity (DG_DSC_TFET) and full both side cavity (DG_FBSC_TFET). The proposed biosensors are differentiated on the basis of the exposed area to trap the biomolecules. In particular, we focused on the sensitivity and ambipolarity of tunnel field-effect sensors. Further, we analysed the effect of biosensor performance on sensing surface properties, including electric field strength, transfer characteristics, I on /I off ratio, and various other related parameters. The critical difficulties of device design and practical limits have been addressed. The simulated results show that the ambipolar current sensitivity of the proposed structure shows comparative better results than other published data, and it is observed that the sensitivity of the DG-FBSC-TFET-based biosensor is twofold more than the DG_BSC_TFET and DG_DSC_TFET. Due to the higher surface to volume ratio in DG_FBSC_TFET, a greater number of biomolecules are immobilised on the surface of the biosensor, which makes it a capable candidate for future low power label free biosensors.
materials science, multidisciplinary,chemistry, physical