Abstract:In this work we theoretically explore the effect of dimensionality on the thermoelectric power factor of indium arsenide (InA) nanowires by coupling atomistic tight-binding calculations to the Linearized Boltzmann transport formalism. We consider nanowires with diameters from 40 nm (bulk-like) down to 3 nm close to one-dimensional (1D), which allows for the proper exploration of the power factor within a unified large-scale atomistic description across a large diameter range. We find that as the diameter of the nanowires is reduced below d < 10 nm, the Seebeck coefficient increases substantially, as a consequence of strong subband quantization. Under phonon-limited scattering conditions, a considerable improvement of ~6× in the power factor is observed around d = 10 nm. The introduction of surface roughness scattering in the calculation reduces this power factor improvement to ~2×. As the diameter is decreased to d = 3 nm, the power factor is diminished. Our results show that, although low effective mass materials such as InAs can reach low-dimensional behavior at larger diameters and demonstrate significant thermoelectric power factor improvements, surface roughness is also stronger at larger diameters, which takes most of the anticipated power factor advantages away. However, the power factor improvement that can be observed around d = 10 nm could prove to be beneficial as both the Lorenz number and the phonon thermal conductivity are reduced at that diameter. Thus, this work, by using large-scale full-band simulations that span the corresponding length scales, clarifies properly the reasons behind power factor improvements (or degradations) in low-dimensional materials. The elaborate computational method presented can serve as a platform to develop similar schemes for two-dimensional (2D) and three-dimensional (3D) material electronic structures.

Enhancement of thermoelectric performance in InAs nanotubes by tuning quantum confinement effect

Enhanced Thermoelectric Properties in Nanowires of InAs Modulated with Multiple-Stub Structures

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Enhanced thermoelectric figure of merit in thin GaAs nanowires.

Thermoelectric properties of ultrasmall single-wall carbon nanotubes

Enhanced Thermoelectric Performance In Graphitic Zno (0001) Nanofilms

Thermoelectric Properties of InA Nanowires from Full-Band Atomistic Simulations

Optimizing the thermoelectric performance of zigzag and chiral carbon nanotubes

Thermoelectric power factor limit of a 1D nanowire

Quantum confinement and energy filtering effect enhancing the thermoelectric power factor of InGaAs with buried ErAs nanoparticles

Enhancement of Thermoelectric Figure-of-merit in Laterally-Coupled Nanowire Arrays

Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes.

Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb

Enhanced Thermoelectric Performance of PbTe Nanocomposites with Ag Nanoinclusions

Enhancement of Thermoelectric Figure-of-Merit by a Nanostructure Approach

High Thermoelectric Figure of Merit in Silicon-Germanium Superlattice Structured Nanowires

Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach

Near‐Room‐Temperature Thermoelectric Performance Enhancement Via Phonon Spectra Mismatch in Mg3(Sb, Bi)2‐Based Material by Incorporating Multi‐Walled Carbon Nanotubes

Exceptional thermoelectric performance of a "star-like" SnSe nanotube with ultra-low thermal conductivity and a high power factor

Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires

Size Dependent Thermoelectric Properties of Silicon Nanowires