Electronic structure and nematic phase transition in superconducting multiple-layer FeSe films grown by pulsed laser deposition method

Bing Shen,Zhong-Pei Feng,Jian-Wei Huang,Yong Hu,Qiang Gao,Cong Li,Yu Xu,Guo-Dong Liu,Li Yu,Lin Zhao,Kui Jin,X J Zhou
DOI: https://doi.org/10.1088/1674-1056/26/7/077402
2017-06-01
Chinese Physics B
Abstract:We report comprehensive angle-resolved photoemission investigations on the electronic structure of single crystal multiple-layer FeSe films grown on CaF2 substrate by pulsed laser deposition (PLD) method. Measurements on FeSe/CaF2 samples with different superconducting transition temperatures Tc of 4 K, 9 K, and 14 K reveal electronic difference in their Fermi surface and band structure. Indication of the nematic phase transition is observed from temperature-dependent measurements of these samples; the nematic transition temperature is 140–160 K, much higher than ∼90 K for the bulk FeSe. Potassium deposition is applied onto the surface of these samples; the nematic phase is suppressed by potassium deposition which introduces electrons to these FeSe films and causes a pronounced electronic structure change. We compared and discussed the electronic structure and superconductivity of the FeSe/CaF2 films by PLD method with the FeSe/SrTiO3 films by molecular beam epitaxy (MBE) method and bulk FeSe. The PLD-grown multilayer FeSe/CaF2 is more hole-doped than that in MBE-grown multiple-layer FeSe films. Our results on FeSe/CaF2 films by PLD method establish a link between bulk FeSe single crystal and FeSe/SrTiO3 films by MBE method, and provide important information to understand superconductivity in FeSe-related systems.
physics, multidisciplinary
What problem does this paper attempt to address?