Atomistic insights into the anisotropic mechanical properties and role of ripples on the thermal expansion of h-BCN monolayers

Siby Thomas,Sang Uck Lee

DOI: https://doi.org/10.1039/c8ra08076c

IF: 4.036

2019-01-01

RSC Advances

Abstract:2D h-BCN is a novel planar semi-conducting material akin to graphene and h-BN with high thermal mechanical stability suitable for the design of h-BCN-based composite materials.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Atomistic insights into the anisotropic mechanical properties and role of ripples on the thermal expansion of h-BCN monolayers

Siby Thomas,Sang Uck Lee

DOI: https://doi.org/10.1039/c8ra08076c

IF: 4.036

2019-01-01

RSC Advances

Abstract:2D h-BCN is a novel planar semi-conducting material akin to graphene and h-BN with high thermal mechanical stability suitable for the design of h-BCN-based composite materials.

chemistry, multidisciplinary
A Molecular Dynamics Study of the Mechanical Properties of H-Bcn Monolayer Using a Modified Tersoff Interatomic Potential

Ying-Yan Zhang,Qing-Xiang Pei,Zhen-Dong Sha,Yong-Wei Zhang

DOI: https://doi.org/10.1016/j.physleta.2019.05.055

IF: 2.707

2019-01-01

Physics Letters A

Abstract:Using molecular dynamics (MD) simulations, we investigate the mechanical properties of hexagonal BCN monolayer, a newly synthesized two-dimensional material with an atom ratio of B/C/N = 1:1:1. The Tersoff potential is modified to get good agreement between predicted and measured fracture strengths of graphene. With this modified Tersoff potential, we perform extensive MD simulations to study the effect of temperature, strain rate and vacancy defect on the mechanical properties of h-BCN. It is found that h-BCN is a strong material with fracture strength of 81.4-93.5 GPa, albeit similar to 35% lower than that of graphene. Similar to graphene, temperature has strong effect on the mechanical properties of h-BCN. As the temperature increases from 10 K to 1300 K, the fracture strength and strain of h-BCN drops by 55% and 62%, respectively. The strain rate is found to have a moderate effect. When the strain rate increases from 0.00002 to 0.0125 ps(-1), the fracture strength and strain of h-BCN increases 6.1% and 12%, respectively. As for the atomic defect, a very small concentration (0.028%) of vacancy in h-BCN is able to cause a 28% reduction in fracture strength and a 35.5% reduction in fracture strain. These findings have significance for its future applications in nanodevices. (C) 2019 Elsevier B.V. All rights reserved.
Large scale growth and characterization of atomic hexagonal boron nitride layers.

Li Song,Lijie Ci,Hao Lu,Pavel B Sorokin,Chuanhong Jin,Jie Ni,Alexander G Kvashnin,Dmitry G Kvashnin,Jun Lou,Boris I Yakobson,Pulickel M Ajayan

DOI: https://doi.org/10.1021/nl1022139

IF: 10.8

2010-01-01

Nano Letters

Abstract:Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN Films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoincientation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.
Delineating the role of ripples on the thermal expansion of 2D honeycomb materials: graphene, 2D h-BN and monolayer (ML)-MoS 2

P. Anees,M. C. Valsakumar,B. K. Panigrahi

DOI: https://doi.org/10.1039/c6cp08635g

IF: 3.3

2017-01-01

Physical Chemistry Chemical Physics

Abstract:Thermally excited ripples are inevitable in 2D crystals, and they can affect the thermophysical properties of these materials significantly. We delineated the role of ripples on the thermal expansion of 2D honeycomb materials using classical molecular dynamics simulations.

chemistry, physical,physics, atomic, molecular & chemical
An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Min Long,Pierre A. Pantaleón,Zhen Zhan,Francisco Guinea,Jose Ángel Silva-Guillén,Shengjun Yuan

DOI: https://doi.org/10.1038/s41524-022-00763-1

IF: 12.256

2022-01-01

npj Computational Materials

Abstract:Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases. In this work, we study heterostructures of TBG and hexagonal boron nitride (hBN) using an atomistic tight-binding model together with semi-classical molecular dynamics to consider relaxation effects. The hBN substrate has significant effects on the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudo-magnetic fields that break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we develop a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics is a powerful tool to study the electronic properties of moiré heterostructures, and to explain experimental results in which the effect of the substrate plays an important role.
Ultralow Thermal Conductivity and Anharmonic Rattling in Two-Dimensional WB4 Monolayer

Xi Jiang,Zhen Zhang,Zhao Liu,Jing Wang,Ying Liu

DOI: https://doi.org/10.1063/5.0087244

IF: 4

2022-01-01

Applied Physics Letters

Abstract:Two-dimensional (2D) WB4 monolayer is a typical graphene analog with high electrical conductivity and structural stability. Yet, its thermal transport properties are not available. By using first-principles calculations and iteratively solving the linearized Boltzmann transport equation, we predict an ultralow in-plane lattice thermal conductivity (κlat) of 0.28 W/m K at T = 300 K. Such an ultralow κlat is attributed to WB4 monolayer's predominantly large phonon scattering rates and flat acoustic phonon dispersion caused by strong anharmonicity. By analyzing the vibrational patterns and bonding environment, we confirm the origin of the strong anharmonicity to be tungsten atom rattling inside the framework of two boron sheets. Such a mechanism fulfills the concept of phonon glass-electron crystal, making the WB4 monolayer an outstanding 2D thermoelectric material. The rich formation mechanism, including multiple interactions in the WB4 monolayer, provides us inspiration for searching for materials with ultralow κlat.
Anisotropic mechanical properties of monolayer fullerene network: An interplay between two types of interfullerene bonds

Penghua Ying,Zheng Zhong,Jin Zhang

DOI: https://doi.org/10.26434/chemrxiv-2022-kgxfk

2022-01-01

Abstract:As a newly synthesised two-dimensional (2D) carbon material, mechanical properties of the monolayer fullerene network or, namely, quasi-hexagonal-phase fullerene (qHP C60) [Hou et al., Nature, 606, 507-510 (2022)] are almost unexplored. In this work, first-principles calculations were conducted to reveal the elastic properties and fracture behaviours of monolayer qHP C60, both of which are strongly anisotropic. Specifically, the Young’s modulus (166 GPa) and the Poisson’s ratio (0.12) in the minimum direction of monolayer qHP C60 are both smaller than any other synthesized 2D carbon crystal materials. In addition, the qHP C60 monolayer stretched along the direction of the [2 + 2] cycloaddition bond is found to possess a larger tensile strength (fracture strain) and exhibit a more complicated crack pattern. The robustness of monolayer qHP C60 under mechanical loading and the sensitivity of its band gap to loading suggest that the strain engineering is an effective method to modulate the electronic properties of monolayer qHP C60, which is found to be especially more efficient when the loading is perpendicular to the [2 + 2] cycloaddition bond. These findings suggest that monolayer qHP C60 could be a potential candidate in developing flexible 2D electronic devices with strain-tunable performance.
Phonons and Thermal Conducting Properties of Borocarbonitride (BCN) Nanosheets

Himanshu Chakraborty,Santosh Mogurampelly,Vivek K. Yadav,Umesh V. Waghmare,Michael L. Klein

DOI: https://doi.org/10.1039/C8NR07373B

2018-10-16

Abstract:Hexagonal borocarbonitrides (BCN) are a class of 2D materials, which display excellent catalytic activity for water splitting. Here, we report analysis of thermal stability, phonons and thermal conductivity of BCN monolayers over a wide range of temperatures using classical molecular dynamics simulations. Our results show that in contrast to the case of graphene and boron nitride monolayers, the out-of-plane phonons in BCN monolayers induce an asymmetry in the phonon density of states at all temperatures. Despite possessing lower thermal conducting properties compared to graphene and BN monolayers, the BCN nanosheets do not lose thermal conductivity as much as graphene and BN in the studied temperature range of 200-1000 K, and thus, the BCN nanosheets are suitable for thermal interface device applications over a wide range of temperatures. Besides their promising role in water splitting, the above results highlight the possibility of expanding the use of BCN 2D materials in thermal management applications and thermoelectrics.

Mesoscale and Nanoscale Physics
First-principles study of the anisotropic thermal expansion and thermal transport properties in h-BN

Bo Niu,Lixiang Zhong,Wei Hao,Zhihua Yang,Xiaoming Duan,Delong Cai,Peigang He,Dechang Jia,Shuzhou Li,YU Zhou

DOI: https://doi.org/10.1007/s40843-020-1527-0

2020-12-04

Science China Materials

Abstract:The thermal expansion coefficient (TEC) and thermal conductivity (k) of thermal fillers are key factors for designing thermal management and thermal protection composite materials. Due to its unique advantages, hexagonal boron nitride (h-BN) is one of the most commonly used thermal fillers. However, its TEC and k values are still unclear due to the inconsistency of characterization techniques and sample preparations. In this work, these disputes were addressed using the quasi-harmonic approximation (QHA) method and phonon Boltzmann transport equation (BTE) theory based on the density functional theory (DFT), respectively. The accuracy of our calculated TEC and k values was confirmed by previously reported experimental results, and the underlying physical principles were analyzed from the phonon behaviors. Our TEC results show that the h-BN has small in-plane negative value and large cross-plane positive value, which are −2.4×10−6 and 36.4×10−6 K−1 at 300 K, respectively. And the anisotropic TEC is mainly determined by the anisotropic isothermal bulk modulus and the low-frequency out-of-plane longitudinal phonon modes. We found that the convergence of cutoff radius and q-grid size have significant effect on the accuracy of k of h-BN. Our results show that the in-plane k is much higher than the cross-plane k, and the values at 300 K are 286.6 and 2.7 W m−1 K−1, respectively. The anisotropic phonon group velocity arising from the vibration behaviors of acoustic phonon modes should be primarily responsible for the anisotropic k. Our calculated TEC and k values will provide important references for the design of h-BN composite materials.

materials science, multidisciplinary
Electronic and Effective Mass Modulation in 2D BCN by Strain Engineering.

Lifei Liu,Liangzhi Kou,Yifeng Wang,Chunhua Lu,Xiaohui Hu

DOI: https://doi.org/10.1088/1361-6528/abaa73

IF: 3.5

2020-01-01

Nanotechnology

Abstract:2D BCN material consisting of graphene and hexagonal boron nitride (h-BN) has received extensive attention due to its abundant electronic properties and promising applications. The actual applications of 2D BCN require that there be precise control over its electronic properties. Using density functional theory calculations, we systematically investigate the electronic structure and effective mass of 2D BCN under biaxial strain. It is demonstrated that the band gap of zigzag BCNs decreases monotonously as the tensile strain increases. Moreover, the system exhibits a similar trend, regardless of the C/h-BN ratio. In sharp contrast, the band gap of armchair BCNs depends on the C/h-BN ratio. Specifically, the band gap of C2(BN)4 decreases significantly, while the band gap of C3(BN)3 and C4(BN)2 initially remains almost unchanged and then increases with increasing biaxial strain in armchair BCNs. In addition, it is found that the effective masses of the electron and hole of BCNs can be effectively modulated by the biaxial strain. Our results suggest a new route to control the electronic properties of 2D BCN and may also facilitate the realization of electronic devices based on 2D BCN material.
Thermomechanical properties of a single hexagonal boron nitride sheet

Sandeep Kumar Singh,M. Neek-Amal,S. Costamagna,F. M. Peeters

DOI: https://doi.org/10.1103/physrevb.87.184106

IF: 3.7

2013-05-07

Physical Review B

Abstract:Using atomistic simulations we investigate the thermodynamical properties of a single atomic layer of hexagonal boron nitride (h-BN). The thermal induced ripples, heat capacity, and thermal lattice expansion of large scale h-BN sheets are determined and compared to those found for graphene (GE) for temperatures up to 1000 K. By analyzing the mean-square height fluctuations 〈h2〉 and the height-height correlation function H(q) we found that the h-BN sheet is a less stiff material as compared to graphene. The bending rigidity of h-BN (i) is about 16% smaller than the one of GE at room temperature (300 K), and (ii) increases with temperature as in GE. The difference in stiffness between h-BN and GE results in unequal responses to external uniaxial and shear stress and different buckling transitions. In contrast to a GE sheet, the buckling transition of a h-BN sheet depends strongly on the direction of the applied compression. The molar heat capacity, thermal-expansion coefficient, and Gruneisen parameter are estimated to be 25.2 J mol−1 K−1, 7.2×10−6 K−1, and 0.89, respectively.

physics, condensed matter, applied,materials science, multidisciplinary
Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Victoria Chen,Yong Cheol Shin,Evgeny Mikheev,Joel Martis,Ze Zhang,Sukti Chatterjee,Arun Majumdar,David Goldhaber-Gordon,Eric Pop

DOI: https://doi.org/10.48550/arXiv.2011.14286

2020-11-29

Materials Science

Abstract:Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single- and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more commonly used polycrystalline Pt and Cu growth substrates. The h-BN film grown on single crystal Pt has a lower surface roughness and is more spatially homogeneous than the film from a polycrystalline Pt foil, and our electrochemical transfer process allows for these expensive foils to be reused with no measurable degradation. In addition, we demonstrate monolayer h-BN as an ultrathin, 3.33 $\unicode{x212B}$ barrier protecting MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition on various substrates demonstrated in this work.
Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Jiangtao Wu,Baolin Wang,Yujie Wei,Ronggui Yang,Mildred Dresselhaus

DOI: https://doi.org/10.1080/21663831.2013.824516

2013-01-01

Materials Research Letters

Abstract:Current interest in two-dimensional materials extends from graphene to others systems such as single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures. Here, we report mechanical properties of h-BN and its band structures tuned by straining by using the density functional theory calculations. Young's modulus and bending rigidity for h-BN are isotropic; its failure strength and failure strain show strong anisotropy. A small fraction of antisite defects in h-BN can largely decrease its mechanical properties. We reveal that strain can tune single-layer h-BN from an insulator to a semiconductor.
Low lattice thermal conductivity of two-dimensional monolayers of BxN (x = 2, 3, and 5) induced by complex bonding networks: A comparative study with h -BN

Zhunyun Tang,Xiaoxia Wang,Jin Li,Chaoyu He,Mingxing Chen,Xinghua Li,Chao Tang,Tao Ouyang

DOI: https://doi.org/10.1063/5.0159417

IF: 4

2023-09-04

Applied Physics Letters

Abstract:It is well known that different bonding networks could bring a wide variety of physical properties to the materials although they hold analogous element and structure features. In this paper, we present a first-principles calculation about the lattice dynamics and phonon transport properties of two-dimensional (2D) boron-rich material BxN (x = 2, 3, and 5). The calculations show that besides the obvious differences in electrical properties compared to h-BN, the special bonding environment in these boron-rich materials also results in quite different phonon behaviors, where their thermal conductivity is at least one order of magnitude smaller than that of h-BN. By performing bonding and lattice dynamics analysis, we reveal that such dramatic reduction of conductivity is attributed to the synergistic effect of weak bond strength (low phonon group velocity) and complex bonding network (strong phonon scattering). Relative regular residual analysis further indicates that the four-phonon process is limited in BxN, and the three-phonon scattering is sufficient to describe their anharmonicity. Starting from the basic physical mechanism, the present study sheds light on the thermal transport properties of 2D boron-rich BxN compounds, which could provide useful insight for their widespread applications in thermal management.

physics, applied
The thermal and thermoelectric properties of in-plane C-BN hybrid structures and graphene/h-BN van der Waals heterostructures

Jingang Wang,Xijiao Mu,Xinxin Wang,Nan Wang,Fengcai Ma,Wenjie Liang,Mengtao Sun

DOI: https://doi.org/10.1016/j.mtphys.2018.05.006

IF: 11.021

2018-06-01

Materials Today Physics

Abstract:The two-dimensional nanomaterials graphene and hexagonal boron nitride (h-BN) have good thermal properties. When the two are combined together to form a planar C-BN hybrid structure or a van der Waals heterostructure due to the differences in crystal lattice and the electronic structure between graphene and h-BN, the new material is formed with novel thermal characteristics. We focus on the thermal properties of the two new materials as they change their configuration, size, and number of layers and review these novel characteristics.

materials science, multidisciplinary,physics, applied
Thermal Conductivity of Two-Dimensional BC3: a Comparative Study with Two-Dimensional C3N

Jieren Song,Zhonghai Xu,Xiaodong He,Yujiao Bai,Linlin Miao,Chaocan Cai,Rongguo Wang

DOI: https://doi.org/10.1039/c9cp01943j

2019-01-01

Abstract:The thermal conductivities of single-layer BC3 (SLBC) sheets and their responses to environmental temperature, vacancy defects and external strain have been studied and compared with those of single-layer C3N (SLCN) sheets by molecular dynamics (MD) simulations. We found that SLBC and SLCN are isotropic in the basal plane and that their predicted thermal conductivities for infinite length sheets are 488.54 W m(-1) K-1 and 799.87 W m(-1) K-1, respectively. Despite many similar features in the structures of these materials, SLBC exhibits a lower thermal conductivity than SLCN due to stronger flexural acoustic phonon-defect scattering rates and weaker interatomic bonding stiffnesses. The vibrational density of states (VDOS) are calculated in both structures to elucidate their thermal conductivity differences. SLBC exhibits a more substantial redshift phenomenon in the high- and low-frequency domains than SLCN. In addition, the thermal conductivities of these materials exhibit decreasing trends in response to increases in temperature and defect ratio, and the temperature effect in SLBC is more substantial than that in SLCN, while the defect effect in SLBC is less substantial than that in SLCN. The influences of uniaxial compressive and tensile strains on the thermal conductivities of these materials are analysed separately. These two deformation modes cause different effects on the thermal transport behaviours of SLBC and SLCN: the effect of uniaxial compressive strain is slightly negative, while the effect of uniaxial tensile strain is initially positive and then negative. Moreover, the biaxial strains result in a more severe reduction in thermal conductivity than the uniaxial strains. Remarkably, the impact of uniaxial and biaxial tensile strains on thermal transport was stronger in SLBC than in SLCN. We propose that SLBC nanomembranes are promising candidates for various thermal applications.
Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Gabriel R. Jaffe,Keenan J. Smith,Kenji Watanabe,Takashi Taniguchi,Max G. Lagally,Mark A. Eriksson,Victor W. Brar

DOI: https://doi.org/10.48550/arXiv.2103.07452

2021-03-12

Materials Science

Abstract:Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon mean free paths in hBN have not been measured. We measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk crystals. We find that the thermal conductivity is extremely sensitive to film thickness. We measure a forty-fold increase in the cross-plane thermal conductivity between 7 nm and 585 nm flakes at 295 K. We attribute the large increase in thermal conductivity with increasing thickness to contributions from phonons with long mean free paths (MFPs), spanning many hundreds of nanometers in the thickest flakes. When planar twist interfaces are introduced into the crystal by mechanically stacking multiple thin flakes, the cross-plane thermal conductivity of the stack is found to be a factor of seven below that of individual flakes with similar total thickness, thus providing strong evidence that phonon scattering at twist boundaries limits the maximum phonon MFPs. These results have important implications for hBN integration in nanoelectronics and improve our understanding of thermal transport in two-dimensional materials.
High thermal conductivity of hexagonal boron nitride laminates

Jin-Cheng Zheng,Liang Zhang,A V Kretinin,S V Morozov,Yi Bo Wang,Tun Wang,Xiaojun Li,Fei Ren,Jingyu Zhang,Ching-Yu Lu,Jia-Cing Chen,Miao Lu,Hui-Qiong Wang,A K Geim,K S Novoselov

DOI: https://doi.org/10.1088/2053-1583/3/1/011004

IF: 6.861

2016-01-18

2D Materials

Abstract:Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride (hBN) has already been acknowledged and these materials have been suggested as novel core materials for thermal management in electronics. However, it was not clear if mass produced flakes of hBN would allow one to achieve an industrially-relevant value of thermal conductivity. Here we demonstrate that laminates of hBN exhibit thermal conductivity of up to 20 W/mK, which is significantly larger than that currently used in thermal management. We also show that the thermal conductivity of laminates increases with the increasing volumetric mass density, which creates a way of fine tuning its thermal properties.

materials science, multidisciplinary
Ultrahigh thermal conductivity in hexagonal BC6N- An efficient material for nanoscale thermal management- A first principles study

Rajmohan Muthaiah,Jivtesh Garg

DOI: https://doi.org/10.1016/j.commatsci.2021.110773

IF: 3.572

2021-12-01

Computational Materials Science

Abstract:Engineering materials with high thermal conductivity are of fundamental interest for efficiently dissipating heat in micro/nanoelectronics. Using first principles computations we report an ultra-high thermal conductivity of 2090 Wm−1K−1 (1395 Wm−1K−1) for hexagonal pure (natural) BC6N(h-BC6N). This value is among the highest thermal conductivities known after diamond and cubic boron arsenide. This ultra-high lattice thermal conductivity (k) is mainly attributed with high phonon group velocities of both acoustic and optical phonons arising from strong CC and BN bonds as well as the light atomic mass of the constituent elements such as boron (B), carbon (C) and nitrogen (N). We also report size dependent thermal conductivity of h-BC6N nanostructures by including boundary scattering. At room temperature (300 K) and at nanoscale length (L) of 100 nm, a high k value of 175 Wm−1K−1 is observed (higher than the bulk k value of silicon). Optical phonons with large group velocities are mainly responsible for this high thermal conductivity in h-BC6N nanostructures. High thermal conductivity of h-BC6N makes it a candidate material for heat dissipation in micro/nano thermal management applications.

materials science, multidisciplinary
Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Jia Zhang,Biying Tan,Xin Zhang,Feng Gao,Yunxia Hu,Lifeng Wang,Xiaoming Duan,Zhihua Yang,PingAn Hu

DOI: https://doi.org/10.1002/adma.202000769

IF: 29.4

2020-08-16

Advanced Materials

Abstract:Atomically thin hexagonal boron nitride (h‐BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D‐material‐based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h‐BN is found to be a natural hyperbolic material in the mid‐infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h‐BN flakes at their proof‐of‐concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large‐scale, high‐quality, atomically thin h‐BN films and heterostructures. Herein, CVD synthesis of atomically thin h‐BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single‐crystal h‐BN film. Meanwhile, epitaxial growth of 2D materials onto h‐BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h‐BN and its heterostructures in optoelectronics and electronics are summarized.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Atomistic insights into the anisotropic mechanical properties and role of ripples on the thermal expansion of h-BCN monolayers

Atomistic insights into the anisotropic mechanical properties and role of ripples on the thermal expansion of h-BCN monolayers

A Molecular Dynamics Study of the Mechanical Properties of H-Bcn Monolayer Using a Modified Tersoff Interatomic Potential

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Delineating the role of ripples on the thermal expansion of 2D honeycomb materials: graphene, 2D h-BN and monolayer (ML)-MoS 2

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Ultralow Thermal Conductivity and Anharmonic Rattling in Two-Dimensional WB4 Monolayer

Anisotropic mechanical properties of monolayer fullerene network: An interplay between two types of interfullerene bonds

Phonons and Thermal Conducting Properties of Borocarbonitride (BCN) Nanosheets

First-principles study of the anisotropic thermal expansion and thermal transport properties in h-BN

Electronic and Effective Mass Modulation in 2D BCN by Strain Engineering.

Thermomechanical properties of a single hexagonal boron nitride sheet

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Low lattice thermal conductivity of two-dimensional monolayers of BxN (x = 2, 3, and 5) induced by complex bonding networks: A comparative study with h -BN

The thermal and thermoelectric properties of in-plane C-BN hybrid structures and graphene/h-BN van der Waals heterostructures

Thermal Conductivity of Two-Dimensional BC3: a Comparative Study with Two-Dimensional C3N

Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

High thermal conductivity of hexagonal boron nitride laminates

Ultrahigh thermal conductivity in hexagonal BC6N- An efficient material for nanoscale thermal management- A first principles study

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures