Band‐gap shift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition

O. Zelaya-Angel,J. J. Alvarado-Gil,R. Lozada-Morales,H. Vargas,A. Ferreira da Silva,O. Zelaya‐Angel,J. J. Alvarado‐Gil,R. Lozada‐Morales

DOI: https://doi.org/10.1063/1.111184

IF: 4

1994-01-17

Applied Physics Letters

Abstract:The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs.

physics, applied