Abstract:Phase‐change materials (PCMs) show a large property contrast that is exploited in memory storage. Fragile‐to‐strong transitions (FST) aid the application of PCMs, as ultrafast crystallization and amorphous phase stability are simultaneously realized. Here, for the PCM Ge3Sb6Te5 the viscosity is measured over sixteen orders of magnitude, clearly demonstrating an FST. Chalcogenide phase‐change materials combine a remarkable set of properties that makes them promising candidates for future non‐volatile memory applications. Binary data storage exploits the high contrast in electrical and optical properties between the covalent amorphous and metavalent crystalline phase. Here the authors perform an analysis of the liquid phase kinetics of the phase‐change material Ge3Sb6Te5, which is the key to ultrafast switching speeds. By employing four experimental techniques, the viscosity is measured over sixteen orders of magnitude despite its propensity for fast crystallization. These measurements reveal that the liquid undergoes a transition in viscosity–temperature dependence associated with a liquid–liquid phase transition. The system exhibits a shallow viscosity change with temperature near the glass transition which stabilizes the memory cells in the amorphous state and which limits the severity of relaxation processes. Meanwhile, when heated during the writing process, the fragility increases to more than double, causing the viscosity to drop rapidly enabling a nanosecond crystallization speed. This change in viscosity–temperature dependence is highly unusual among glass forming liquids and is reminiscent of the behavior of water. This viscosity transition is also key to the technological success of phase‐change materials for computer memory applications.

Femtosecond x-ray diffraction reveals a liquid–liquid phase transition in phase-change materials

Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Fragile‐to‐Strong Transition in Phase‐Change Material Ge3Sb6Te5

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

Time-Domain Separation of Optical Properties From Structural Transitions in Resonantly Bonded Materials

Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Monatomic phase change memory

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multi‐layer thin films

Phase Transition Characteristics of Al-Sb Phase Change Materials for Phase Change Memory Application

Investigation of Phase Transition in Stacked Ge-Chalcogenide/SnTe Phase-change Memory Films

Fast Phase Transitions Induced by Picosecond Electrical Pulses on Phase Change Memory Cells

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Opto-Mechanics Driven Fast Martensitic Transition in Two-Dimensional Materials.

Phase-change memory function of correlated electrons in organic conductors

Breaking the Speed Limits of Phase-Change Memory

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Low Thermal Conductivity Phase Change Memory Superlattices

Sb-Rich Si-Sb-Te Phase Change Material for Multilevel Data Storage: the Degree of Disorder in the Crystalline State

Ultralow–switching current density multilevel phase-change memory on a flexible substrate