Abstract:Bismuth titanate Bi4Ti3O12 (BIT) based lead-free piezoelectric ceramics with the formula Bi4Ti3-2xWxTaxO12 (abbreviated as BITWT-x, x = 0, 0.015, 0.03, 0.04, 0.045, 0.05) were fabricated by the conventional solid-state sintering method. The effect of W and Ta doping on the crystal structure and electrical properties of BITWT-x ceramics were investigated. BITWT-x ceramics had an orthogonal phase, and crystal structural distortion of W/Ta co-doped BITWT-x based ceramics was higher than that of BITWT-0 ceramics, which improved the ferroelectricity and the piezoelectric property. The ferroelectricity (Pr = 7.78 μC/cm2) of BITWT-0.03 ceramics was better than that (Pr = 0.84 μC/cm2) of BITWT-0 ceramics. The piezoelectric property (d33) was enhanced, and the highest d33 of BITWT-0.04 ceramics was 21.4 pC/N. Moreover, the d33 of the BITWT-x ceramics at 600 °C still kept 80% of its original d33 when the value of x was in the range of 0.03–0.045. Donor ions W6+ and Ta5+ reduced ionic conductivity (oxygen vacancies) and electron conductivity (holes), then increased the resistivity of BITWT-x ceramics (ρ400 °C = 1.82 × 108 Ω cm, x = 0.03). However, the enhanced effect reached a saturated state when x was 0.03. Thus, the BITWT-x ceramics were suitable for the high-temperature application.

Influence of co-modification with tungsten and tantalum on the crystal structure and electrical properties of bismuth titanate ceramics

Effect of Tantalum Ion Doping on the Structure and Electrical Properties of Bi3Ti1.5W0.5O9-Bi4Ti3O12 Intergrowth Bismuth-Layered Ceramics

Facile Preparation and Performance of Novel High-Tc Xbi(ni1/2ti1/2)o3-(1-x)pb(zr1/2ti1/2)o3 Piezoceramics

Enhanced electrical properties and thermal stability of W/Cr co‐doped BIT-based high‐temperature piezoelectric ceramics

Doping Effects In (Ba0.85ca0.15)(Hf0.1ti0.9)O-3 Lead-Free Piezoelectric Ceramics Prepared Via Powder Injection Moulding Using Simple Binder

Effect of (K0.5Ce0.5) complex on the electrical properties of lead‐free Bi4Ti2.86W0.14O12 high‐temperature piezoelectric ceramics

Bismuth titanate based piezoceramics: Structural evolutions and electrical behaviors at different sintering temperatures

Tailoring hardness behaviors of BIT-based piezoceramics via doping and annealing strategies

ELECTRICAL AND MECHANICAL PROPERTIES OF (1-X)(bi1/2na1/2)0.900ba0.088sr0.012tio3-x(bi1/2k1/2)tio3lead-free PIEZOELECTRIC CERAMICS

Enhanced high-temperature piezoelectric properties of Bi(Zn0.5Ti0.5)O3-modified BiFeO3–BaTiO3 ceramics

Enhanced piezoelectric performance in Na0.5Bi4.5Ti4O15‐based Bismuth‐layered ceramics by Nb/Mn doping modification

Anisotropic effects of oxygen vacancy defects on the electrical properties of highly oriented bismuth titanate ferroelectric ceramics

Improvement of piezoelectric properties of Bi4Ti3O12 ceramics by Mn/Ta co-doping and direct reaction sintering

Effects of Bi(Zn0.5Ti0.5)O3 introduction on the structures and electrical properties of BiFeO3–BaTiO3 lead-free piezoelectric ceramics

Effect of W/Cr co-doping on electrical properties of Ca0.94Ce0.06Bi4Ti4O15 high-temperature piezoceramics

Effects of heterovalent ions doping-induced oxygen octahedral distortion and defect chemical change on piezoelectric characteristics and thermal stability of PHT-PIN ceramics

Influence of Different Dopants on the Piezoelectric Properties of the Na<sub>1/2</sub>Bi<sub>1/2</sub>TiO<sub>3</sub>-BaTiO<sub>3</sub>- Lead-Free Ceramics

Chemical and structural effects on the high-temperature mechanical behavior of (1−x)(Na1/2Bi1/2)TiO3-xBaTiO3 ceramics

Influence of Different Dopants on the Piezoelectric Properties of the Na1/2bi1/2tio3-Batio3 Lead-Free Ceramics

Enhanced optical, dielectric, and non-Ohmic properties in Ta-doped Bi2/3Cu3Ti4O12 ceramics

Enhanced piezoelectric properties of Ce-doped Bi3Ti1.5W0.5O9 high-temperature Aurivillius piezoceramics