Development of Rutile Titanium Oxide Thin Films as Battery Material Component Using Atomic Layer Deposition

Alireza M. Kia,Sascha Bönhardt,Sabine Zybell,Kati Kühnel,Nora Haufe,Wenke Weinreich
DOI: https://doi.org/10.1002/pssa.201800769
2019-08-23
physica status solidi (a)
Abstract:<p>The growth kinetics, crystal structure, and uniformity of titanium‐oxide (TiO<sub>2</sub>) thin films prepared using atomic layer deposition (ALD) and plasma‐enhanced ALD (PE‐ALD) are studied in this paper. The TiO<sub>2</sub> thin films are grown using titanium tetrachloride (TiCl<sub>4</sub>), water and oxygen precursors. Using ALD, we are able to grow TiO<sub>2</sub> in the temperature range of 270–310 °C thermally, and in the range of 300–400 °C with PE‐ALD. In spite of the plasma process yielding better uniformityon on planar structures, the optimized thermal process provides remarkable conformal step coverage within deep trenches. In addition, the change in the crystal structure and phase transitions of the TiO<sub>2</sub> is presented herein. This is attempted to using TiO<sub>2</sub> as a component material to grow lithium titanate (LTO) as an electrode material in solid‐state lithium‐ion batteries (LIBs). Thereby, different substrates are used. In comparison to the silicon (Si) substrate, silicon oxide (SiO<sub>2</sub>) and titanium nitride (TiN) lead to crystal phase transformation while annealing. Measurements are performed using in‐situ high‐temperature X‐ray diffraction (HT‐XRD). We show that when TiN is sandwiched between TiO<sub>2</sub> and the silicon substrate, the TiO<sub>2</sub> thin film (25 nm) gradually changes from an anatase to a rutile structure.</p><p>This article is protected by copyright. All rights reserved.</p>
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