A 8.1-nW, 4.22-kHz, −40–85 °C relaxation oscillator with subthreshold leakage current compensation and forward body bias buffer for low power IoT applications
Rong Zhou,Linwei Wang,Jianhang Yang,Zhen Li,Xiaoteng Zhao,Shubin Liu
DOI: https://doi.org/10.1016/j.mejo.2024.106090
IF: 1.992
2024-01-08
Microelectronics Journal
Abstract:This paper presents a relaxation oscillator (RxO) utilizing subthreshold transistor leakage current compensation (SLC) technology to expand the operating range from 70 °C to 85 °C at high temperatures. The compensated RxO outperforms the uncompensated counterpart by 25 times for temperature coefficient (TC). Additionally, forward body bias (FBB) technology optimizes the digital buffer delay with temperature drift at low supply voltage, extending the oscillator's low-temperature range from −20 °C to −40 °C. Fabricated in a 65 nm CMOS process, the oscillator consumes a mere 8.1 nW at a 0.4 V supply voltage. At room temperature, it operates at 4.22 kHz with an energy efficiency of 1.92 nW/kHz. The oscillator demonstrates a temperature coefficient (TC) of 114.01 ppm/°C within the range of −40 °C to 85 °C, rendering it a prospective choice for low-power Internet of Things (IoT) applications.
engineering, electrical & electronic,nanoscience & nanotechnology