A 32-ppm/degrees C 0.9-nW/kHz Relaxation Oscillator with Event-Driven Architecture and Charge Reuse Technique

Xinhang Xu,Siyuan Ye,Jihang Gao,Yihan Zhang,Linxiao Shen,Le Ye
DOI: https://doi.org/10.1109/ISCAS48785.2022.9937717
2022-01-01
Abstract:This paper presents a dual-phase RC-based relaxation oscillator (RxO) with low temperature coefficient (TC) and high power efficiency achieved simultaneously for energyconstrained Internet-of-Things (IoT) applications with burstmode requirements. Its circuit-level event-driven architecture reduces the duty cycle of power-hungry blocks, saving power while posing little performance penalty. In addition, the charge reuse technique further reduces the power consumption for the always-on detecting circuit. Implemented in a 0.18- mu m CMOS process, the 180-kHz relaxation oscillator exhibits a frequency deviation of +/- 0.26% against temperature (-40 to 125 degrees C) from Monte-Carlo simulation (N=30), leading to a low temperature coefficient of 32 ppm/degrees C. The simulated power consumption is 163 nW, resulting in power efficiency of 0.9 nW/kHz.
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