Layer and size distribution control of CVD-grown 2D MoS2 using ALD-deposited MoO3 structures as the precursor

Mustafa Demirtaş,Cem Odacı,Yahaya Shehu,Nihan Kosku Perkgöz,Feridun Ay

DOI: https://doi.org/10.1016/j.mssp.2019.104880

IF: 4.1

2020-03-01

Materials Science in Semiconductor Processing

Abstract:We study the use of atomic layer deposited MoO3 films acting as Mo precursor, in a subsequent step to grow uniform MoS2 structures with excellent layer and size control over the entire substrate by chemical vapor deposition (CVD)/sulfurization process. ALD MoO3 provides two critical advantages in CVD/sulfurization of MoS2, which are the uniform sublimation and control of the amount of the Mo precursor vapor. While uniform sublimation of the MoO3 film provides uniform Mo vapor enabling reproducible growth of MoS2 on the entire substrate, control of the amount of Mo precursor provides the size and layer tuning. This control is achieved by changing the number of cycles in the ALD process. The MoO3 films are deposited on 300 nm SiO2/Si substrates using Mo(CO)6 and remote O2 plasma at 160 °C. As-deposited ALD MoO3 films are annealed at 400 and 600 °C to demonstrate the uniform nucleation domains and sublimation taking place during CVD/sulfurization. Both as-deposited and post-annealed ALD MoO3 films are characterized using spectroscopic ellipsometry, μRaman, and FTIR-ATR and AFM. For MoS2 structures, photoluminescence measurements are additionally performed to verify mono and multi-layered formations. Sparsely dense monolayer MoS2 triangles, with an edge length of ~40 μm and a thickness of ~0.78 nm are obtained with a 150-cycle MoO3 process due to an optimal distance between the nucleation domains. Moreover, as the ALD-cycle number is increased, these nucleation domains become dense, which causes the MoS2 structures to be multi-layered. It is anticipated that our results present a new possibility of controlling the formation of 2D MoS2 structures for various optoelectronic applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to precisely control the number of layers and the size distribution of molybdenum disulfide (MoS₂) in the chemical vapor deposition (CVD) process through atomic layer deposition (ALD) technology. Specifically, the researchers used molybdenum trioxide (MoO₃) deposited by ALD as a precursor to achieve the growth of a uniform and controllable MoS₂ structure on the entire substrate.

### Research Background and Problems

Two - dimensional transition metal dichalcogenides (TMDCs), especially molybdenum disulfide (MoS₂), have received extensive attention due to their superior performance in optoelectronic devices, sensors, and other fields. However, in the traditional CVD method, due to the excessive consumption of precursors (such as MoO₃ powder and elemental sulfur), it is difficult to precisely control the number of layers and the size distribution of MoS₂. This leads to the non - repeatability and non - uniformity of the MoS₂ structure.

### Problems Solved in the Paper

1. **Uniformity of Precursors**: By using the MoO₃ film deposited by ALD as the Mo precursor, the uniform sublimation of the Mo precursor during the growth of MoS₂ was achieved. This ensures the uniform distribution of Mo vapor on the entire substrate, thereby improving the repeatability of MoS₂ growth.

2. **Regulation of the Number of Layers and Size**: By changing the number of cycles in the ALD process to control the amount of the Mo precursor, and then regulate the number of layers and size of MoS₂. Research shows that as the number of ALD cycles increases, the MoS₂ structure gradually changes from a single - layer to a multi - layer, and the size distribution also changes.

3. **Understanding of the Growth Mechanism**: Through the characterization of MoO₃ films under different ALD cycle numbers (including Raman spectroscopy, Fourier - transform infrared spectroscopy, atomic force microscopy, etc.), the phase change of MoO₃ at different temperatures and its influence on the growth of MoS₂ were deeply understood.

### Experimental Results

- Using the MoO₃ film deposited by 150 ALD cycles, a uniformly distributed single - layer MoS₂ triangular flake can be obtained, with a side length of about 40 μm and a thickness of about 0.78 nm.
- As the number of ALD cycles increases, the MoS₂ structure becomes more dense and forms a multi - layer structure.
- By changing the initial form of MoO₃ (such as amorphous state, β - phase, and α - phase), the growth conditions of MoS₂ were further optimized.

### Conclusions

This study shows how to use the MoO₃ film deposited by ALD as the Mo precursor to precisely control the number of layers and the size distribution of MoS₂ through the CVD/sulfurization process. This method provides new possibilities for preparing high - quality, uniform MoS₂ structures and is suitable for various optoelectronic device applications.

### Formula Display

- The single - layer thickness of MoS₂: \[ \text{Thickness} = 0.78 \, \text{nm} \]
- The difference in Raman spectral peak positions: \[ \Delta \nu=\nu_{A1g}-\nu_{E2g1} = 20.31 \, \text{cm}^{-1} \]

These formulas and experimental results show that the MoO₃ film deposited by ALD can effectively regulate the growth of MoS₂ and achieve a uniform and controllable MoS₂ structure.