Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition

Sapna D. Ponja,Sanjayan Sathasivam,Ivan P. Parkin,Claire J. Carmalt
DOI: https://doi.org/10.1038/s41598-020-57532-7
IF: 4.6
2020-01-20
Scientific Reports
Abstract:Abstract Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In 2 O 3 as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10 −4 Ω.cm) and highest carrier concentration (4.23 × 10 20 cm −3 ) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.
multidisciplinary sciences
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