Abstract:As a class of emerging semiconductors, halide perovskites hold significant potentials for multiple fields. However, current halide perovskite electronic devices are heavily focused on polycrystalline thin films, primarily due to the simplicity of depositing polycrystals.1,2 Despite their successful use cases in various devices, polycrystalline halide perovskite thin films face many challenges that greatly impede their further research, development, and commercialization of those devices. A high density of structural defects is typically present in the polycrystalline thin films, including point defects (e.g., vacancies, interstitials, and substitutional antisites), impurities, dislocations, grain boundaries, and residual precipitates (e.g., PbI2 cluster and metallic Pb from the fast antisolvent deposition process).3 Those defects result in non-radiative carrier loss,4 material degradation,5 device hysteresis,6 and many other detrimental effects.7,8 Single-crystal halide perovskites, on the contrary, exhibit a largely suppressed density of those structural defects due to the ordered lattice arrangement. This structural superiority bestows the single Single-crystal halide perovskites have demonstrated excellent optoelectronic properties and promising device application potentials, thanks to their remarkable carrier dynamics, solution processing procedures, and outstanding stabilities. The latest progress and future perspectives of single-crystal halide perovskites are reviewed herein. The basic properties and fundamental studies of single-crystal halide perovskites are first discussed. We then introduce the growth methods for these materials and summarize their recent developments. We further present the single-crystal halide perovskite devices among their major application fields. Finally, we discuss current challenges and provide some suggestions for their further development. We hope this paper can help readers understand the status and future challenges for single-crystal halide perovskites.

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