Epitaxial graphene gas sensors on SiC substrate with high sensitivity

Cui Yu,Qingbin Liu,Zezhao He,Xuedong Gao,Enxiu Wu,Jianchao Guo,Chuangjie Zhou,Zhihong Feng
DOI: https://doi.org/10.1088/1674-4926/41/3/032101
2020-03-01
Journal of Semiconductors
Abstract:Abstract 2D material of graphene has inspired huge interest in fabricating of solid state gas sensors. In this work, epitaxial graphene, quasi-free-standing graphene, and CVD epitaxial graphene samples on SiC substrates are used to fabricate gas sensors. Defects are introduced into graphene using SF 6 plasma treatment to improve the performance of the gas sensors. The epitaxial graphene shows high sensitivity to NO 2 with response of 105.1% to 4 ppm NO 2 and detection limit of 1 ppb. The higher sensitivity of epitaxial graphene compared to quasi-free-standing graphene, and CVD epitaxial graphene was found to be related to the different doping types of the samples.
physics, condensed matter
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