Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers

V S Khoroshilov,D E Protopopov,D M Kazantsev,A G Zhuravlev
DOI: https://doi.org/10.1088/1742-6596/1482/1/012013
2020-03-01
Journal of Physics: Conference Series
Abstract:Abstract A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p + -GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p + -GaAs surface is compared with that observed on Cs/UP + -structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.
What problem does this paper attempt to address?