Simulation and optimization of CH3NH3SnI3 based inverted perovskite solar cell with NiO as Hole transport material

M.S. Shamna,K.S. Nithya,K.S. Sudheer
DOI: https://doi.org/10.1016/j.matpr.2020.03.488
2020-01-01
Materials Today: Proceedings
Abstract:A planar perovskite solar cell (PSC) with p-i-n inverted structure is modeled and simulated using SCAPS software to determine the power output characteristics under illumination. The inverted structure is NiO/CH3NH3SnI3/PCBM where NiO is the hole transport layer (HTL), CH3NH3SnI3 is the perovskite absorber layer and PCBM is the electron transport layer (ETL). Simulation efforts are focused on thickness of three layers, defect density of interfaces, density of states, and metal work function effect on power conversion efficiency (PCE) of solar cell. For optimum parameters of all three layers, efficiency of 22.95% has been achieved. From the simulations, an alternate lead free inverted perovskite solar cell is introduced.
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