Electronic and thermal properties of monolayer beryllium oxide from first principles

Chongqun Xia,Wu Li,Dengke Ma,Lifa Zhang
DOI: https://doi.org/10.1088/1361-6528/ab97d0
IF: 3.5
2020-07-01
Nanotechnology
Abstract:Monolayer beryllium oxide (BeO), a new graphene-like metal oxide material, has attracted great attention since it was reported in recent years and demonstrated to have high dynamic, thermal, kinetic and mechanic stabilities. This discovery enriches the catalogue of two-dimensional (2D) materials and paves the way for the exploration of relevant properties. In this work, the electronic and thermal properties of monolayer BeO are predicted by first-principles calculations. Compared with graphene and monolayer hexagonal boron nitride (h-BN), the monolayer BeO is an insulator and its electrons are highly localized around O atoms and Be atoms (ionic nature). At 300 K, the thermal conductivity of monolayer BeO is found to be 266 W/mK, which is lower than that of graphene and h-BN but higher than most other 2D materials. With the characteristics of wide band gap and high thermal conductivity, monolayer BeO shows great potential in applications of electronic device package and Li-ion batteries.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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