Abstract:Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve their performance. Graphene supported on hexagonal boron nitride (h-BN) substrate has been reported to show enhanced (opto)electronic and thermal properties as compared to extensively used SiO2/Si supported graphene. Motivated by this, we have performed temperature- and power-dependent Raman Spectroscopic measurements on four different types of (hetero)structures: (a) h-BN (BN), (b) graphene (Gr), (c) h-BN on graphene (BG), and (d) graphene encapsulated by h-BN layers from both top and bottom (BGB), all supported on SiO2/Si substrate. We have estimated the values of thermal conductivity (\k{appa}) and interfacial thermal conductance per unit area (g) of these four (hetero)structures to demonstrate the structure-activity (thermal) relationship. We report here the values of \k{appa} and g for h-BN supported on SiO2/Si as 280.0 +-58.0 Wm-1K-1 and 25.6+-0.4 MWm-2K-1, respectively. More importantly, we have observed an improvement in both thermal conductivity and interfacial thermal conductance per unit area in the heterostructures which ensures a better heat dissipation in devices. The \k{appa} and g of h-BN encapsulated graphene on SiO2/Si (BGB) sample was observed to be 850.0+-81.0 Wm-1K-1 and 105+-1 MWm-2K-1, respectively, as opposed to 600.0+-93.0 Wm-1K-1 and 1.15+-0.40 MWm-2K-1, respectively, for graphene on SiO2/Si substrate. Therefore, we propose that for graphene-based nanoscale devices, encapsulation with h-BN is a better alternative to address heat management issues.

High Thermal Conductivity in Covalently Bonded Bi-Layer Honeycomb Boron Arsenide

High thermal conductivity driven by the unusual phonon relaxation time platform in 2D monolayer boron arsenide

High thermal conductivity in cubic boron arsenide crystals

High-pressure Phases of Boron Arsenide with Potential High Thermal Conductivity

Experimental observation of high thermal conductivity in boron arsenide

Abnormal thermal conductivity enhancement in covalently bonded bilayer borophene allotrope

Mechanical Properties of Boron Arsenide Single Crystal

Ultrahigh Thermal Conductivity of Cubic Boron Arsenide with an Unexpectedly Strong Temperature Dependence

Unusual High Thermal Conductivity in Boron Arsenide Bulk Crystals

Thermal Expansion Coefficient and Lattice Anharmonicity of Cubic Boron Arsenide

High thermal conductivity of hexagonal boron nitride laminates

Ultralow Thermal Conductivity and Anharmonic Rattling in Two-Dimensional WB4 Monolayer

Phonon Transport in Two-Dimensional Carbon-Boron Material and Heterointerfaces

Prediction and Optimization of the Thermal Transport in Hybrid Carbon-Boron Nitride Honeycombs Using Machine Learning

Low lattice thermal conductivity of two-dimensional monolayers of BxN (x = 2, 3, and 5) induced by complex bonding networks: A comparative study with h -BN

Seeded Growth of Boron Arsenide Single Crystals with High Thermal Conductivity

Abnormal enhancement of thermal conductivity by planar structure: A comparative study of graphene-like materials

Three-Fold Enhancement of In-Plane Thermal Conductivity of Borophene through Metallic Atom Intercalation

Highly reproducible synthesis of boron arsenide with high thermal conductivity

Hexagonal Boron Nitride-Graphene Heterostructures with Enhanced Interfacial Thermal Conductance for Thermal Management Applications

Thermal expansion coefficients of high thermal conducting BAs and BP materials