Abstract:InAs1-xSbx is a unique semiconductor as it possesses the lowest bandgap (Eg) of the conventional III–V materials, yielding emission out to nearly 15 μm at room temperature. As such, it is well-suited as the absorber material in long-wavelength infrared (IR) applications such as chemical sensing and large format IR imaging. However, the compositions at the longest wavelengths are significantly lattice-mismatched to conventional substrates. Overcoming this lattice-mismatch requires using thick graded buffers, and to date, little work has focused on the effect of growth conditions on the Sb-incorporation or optical quality of the longest-wavelength InAs1-xSbx materials. Here, the authors investigate the molecular beam epitaxy (MBE) growth of this potential absorber material by using solid source MBE to grow InAs1-xSbx on step-graded buffers on GaSb substrates. The authors have achieved cap-layer compositions as high as x ≈ 0.55 under various substrate temperatures (Tsub) and V/III beam equivalent pressure ratios. By using InAs1-xSbx as the grading material as well as the cap material, the authors can measure Sb-content as a function of growth conditions over many compositions. The author's results show good agreement between x and Eg compared with previous reports, obtaining T = 8 K photoluminescence (PL) emission approaching 11 μm. However, the authors also found that Sb-incorporation falls off for x > 0.2 and worsens with increasing Tsub, suggesting that Sb-incorporation rates increase with reduced adatom mobility. Additionally, the PL of the samples show improved intensity when either Tsub or V/III were increased, while cross-sectional transmission electron microscopy revealed a significant decrease in threading dislocation density with increased V/III. Ultimately, the authors found that under the proper growth conditions, optically active InAs1-xSbx with x over 0.55 can be attained, and with an optimized grading structure, could be a low-cost alternative to HgCdTe for long-wavelength infrared optoelectronics.

Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

The Effect of Sb Content in InAs1-xSbx/GaSb Type-II Superlattices

Atomic Intermixing and Segregation at the Interface of InAs/GaSb Type II Superlattices

Photocurrent spectra of InAs/Ga0.75In0.25Sb superlattices with infrared detector structure

Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications

Interfacial Structure of InAs/Ga1−xInxSb Superlattices

A surface and interface study on the InSb/GaAs heterostructures

Insight into the Split and Asymmetry of Charge Distribution in Biased M-Structure Superlattice

Novel 3D Reciprocal Space Visualization of Strain Relaxation in InSb on GaAs Substrates

Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Multistep InAs/InAsSb Staircase Nbn Long-Wavelength Infrared Detectors with Enhanced Charge Carrier Transport

Evaluation of the in Concentration of an InxGa1−xSb Alloy Layer in Cross-Sectional HRTEM Images of III–V Semiconductor Superlattices

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

Observation of Interface Dependent Spin Polarized Photocurrents in Inas/Gasb Superlattice

Atom probe composition and in situ electronic structure of epitaxial quantum dot ensembles

Simulation of the band structure of InAs/GaSb type II superlattices utilizing multiple energy band theories

Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR applications

Interband Transitions of InAs/AlAs Short-Period Superlattices Grown by Molecular Beam Epitaxy