Enhancement of the electrical performance of TiO2/p-Si heterojunction diode by Gadolinium doping

Serif Ruzgar
DOI: https://doi.org/10.1007/s00339-020-03957-w
2020-09-09
Applied Physics A
Abstract:In this study, the TiO<sub>2</sub>/p-Si and Gd:TiO<sub>2</sub>/p-Si heterojunctions were fabricated by sol–gel method. The UV–Vis spectroscopy was performed to evaluate optical characteristics of TiO<sub>2</sub> and Gd:TiO<sub>2</sub> thin films. It was observed that the optical band gap, transmittance, extinction coefficient and optical dielectric constants of TiO<sub>2</sub> thin film were increased with Gd content. The electrical features of the heterojunction diodes were analyzed and compared by conventional <i>I–V</i> measurements under dark condition. With the Gd doping, the ideality factor of TiO<sub>2</sub>/p-Si diode decreased from 8.97 to 3.87 and rectification ratio increased from 1.59 × 10<sup>3</sup> to 1.45 × 10<sup>6</sup>. The serial resistance of diodes was calculated by both Norde and Cheung methods. The high series resistance value and high dark current of the TiO<sub>2</sub>/p-Si diode have been successfully surmounted with the Gd doping. Moreover, the photovoltaic properties of the Gd:TiO<sub>2</sub>/p-Si photodiode were studied under various illumination intensities. It has been shown that the Gd:TiO<sub>2</sub>/p-Si diode can be utilized as a photosensor due to its reaction to light.
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